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Article: Instabilities in gate-controlled-diode characteristics of n-MOSFETs following hot-carrier injection

TitleInstabilities in gate-controlled-diode characteristics of n-MOSFETs following hot-carrier injection
Authors
Issue Date1997
PublisherInstitute of Physics Publishing. The Journal's web site is located at http://www.iop.org/journals/sst
Citation
Semiconductor Science And Technology, 1997, v. 12 n. 11, p. 1365-1368 How to Cite?
AbstractA continued change of gate-controlled-diode characteristics of n-MOSFETs following hot-carrier injection is observed. It is also observed that the post-stress gate-controlled-diode characteristics can be altered by the electrical measurement itself. It is found that the instabilities in the gate-controlled-diode characteristics are due to the change of gate current I g in the post-stress period. This current increases with both the stress time and the post-stress time but is reduced by the measurement itself. These phenomena can be explained by a model which is based on the release of hydrogen ions by thermal detrapping of the trapped holes in the gate oxide.
Persistent Identifierhttp://hdl.handle.net/10722/80631
ISSN
2015 Impact Factor: 2.098
2015 SCImago Journal Rankings: 0.676
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorChen, TPen_HK
dc.contributor.authorLo, KFen_HK
dc.contributor.authorFung, Sen_HK
dc.date.accessioned2010-09-06T08:08:35Z-
dc.date.available2010-09-06T08:08:35Z-
dc.date.issued1997en_HK
dc.identifier.citationSemiconductor Science And Technology, 1997, v. 12 n. 11, p. 1365-1368en_HK
dc.identifier.issn0268-1242en_HK
dc.identifier.urihttp://hdl.handle.net/10722/80631-
dc.description.abstractA continued change of gate-controlled-diode characteristics of n-MOSFETs following hot-carrier injection is observed. It is also observed that the post-stress gate-controlled-diode characteristics can be altered by the electrical measurement itself. It is found that the instabilities in the gate-controlled-diode characteristics are due to the change of gate current I g in the post-stress period. This current increases with both the stress time and the post-stress time but is reduced by the measurement itself. These phenomena can be explained by a model which is based on the release of hydrogen ions by thermal detrapping of the trapped holes in the gate oxide.en_HK
dc.languageengen_HK
dc.publisherInstitute of Physics Publishing. The Journal's web site is located at http://www.iop.org/journals/ssten_HK
dc.relation.ispartofSemiconductor Science and Technologyen_HK
dc.titleInstabilities in gate-controlled-diode characteristics of n-MOSFETs following hot-carrier injectionen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0268-1242&volume=12&spage=1365&epage=1368&date=1997&atitle=Instabilities+in+Gate-Controlled-Diode+Characteristics+of+n-MOSFETs+Following+Hot-Carrier+Injectionen_HK
dc.identifier.emailFung, S: sfung@hku.hken_HK
dc.identifier.authorityFung, S=rp00695en_HK
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1088/0268-1242/12/11/007en_HK
dc.identifier.scopuseid_2-s2.0-5244344831en_HK
dc.identifier.hkuros29616en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-5244344831&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume12en_HK
dc.identifier.issue11en_HK
dc.identifier.spage1365en_HK
dc.identifier.epage1368en_HK
dc.identifier.isiWOS:A1997YF01900005-
dc.publisher.placeUnited Kingdomen_HK
dc.identifier.scopusauthoridChen, TP=27169708800en_HK
dc.identifier.scopusauthoridLo, KF=7402101523en_HK
dc.identifier.scopusauthoridFung, S=7201970040en_HK

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