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Article: 418 cm-1 Raman scattering from gallium nitride nanowires: Is it a vibration mode of N-rich Ga-N bond configuration?
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Title418 cm-1 Raman scattering from gallium nitride nanowires: Is it a vibration mode of N-rich Ga-N bond configuration?
 
AuthorsNing, JQ1
Xu, SJ1
Yu, DP3
Shan, YY2
Lee, ST2
 
KeywordsCrystal growth
Gallium nitride
Molecular vibrations
Nitriding
Raman scattering
 
Issue Date2007
 
PublisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/
 
CitationApplied Physics Letters, 2007, v. 91 n. 10 [How to Cite?]
DOI: http://dx.doi.org/10.1063/1.2780081
 
AbstractA Raman-active vibration mode at 418 cm-1 is observed in wurtzite gallium nitride (GaN) nanowires synthesized by different growth methods. In particular, Raman scattering measurements of a number of GaN nanowires systematically prepared by nitriding Β- Ga2 O3 nanowires at different temperatures show an interesting evolution of the mode, revealing that it is most likely the vibration mode of N-rich octahedral Ga- N6 bonds. This idea is further supported by the high-resolution transmission electron microscopic observation. © 2007 American Institute of Physics.
 
ISSN0003-6951
2013 Impact Factor: 3.515
 
DOIhttp://dx.doi.org/10.1063/1.2780081
 
ISI Accession Number IDWOS:000249322900070
 
ReferencesReferences in Scopus
 
DC FieldValue
dc.contributor.authorNing, JQ
 
dc.contributor.authorXu, SJ
 
dc.contributor.authorYu, DP
 
dc.contributor.authorShan, YY
 
dc.contributor.authorLee, ST
 
dc.date.accessioned2010-09-06T08:08:20Z
 
dc.date.available2010-09-06T08:08:20Z
 
dc.date.issued2007
 
dc.description.abstractA Raman-active vibration mode at 418 cm-1 is observed in wurtzite gallium nitride (GaN) nanowires synthesized by different growth methods. In particular, Raman scattering measurements of a number of GaN nanowires systematically prepared by nitriding Β- Ga2 O3 nanowires at different temperatures show an interesting evolution of the mode, revealing that it is most likely the vibration mode of N-rich octahedral Ga- N6 bonds. This idea is further supported by the high-resolution transmission electron microscopic observation. © 2007 American Institute of Physics.
 
dc.description.naturepublished_or_final_version
 
dc.identifier.citationApplied Physics Letters, 2007, v. 91 n. 10 [How to Cite?]
DOI: http://dx.doi.org/10.1063/1.2780081
 
dc.identifier.doihttp://dx.doi.org/10.1063/1.2780081
 
dc.identifier.eissn1077-3118
 
dc.identifier.hkuros135983
 
dc.identifier.isiWOS:000249322900070
 
dc.identifier.issn0003-6951
2013 Impact Factor: 3.515
 
dc.identifier.issue10
 
dc.identifier.openurl
 
dc.identifier.scopuseid_2-s2.0-34548506478
 
dc.identifier.urihttp://hdl.handle.net/10722/80609
 
dc.identifier.volume91
 
dc.languageeng
 
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/
 
dc.publisher.placeUnited States
 
dc.relation.ispartofApplied Physics Letters
 
dc.relation.referencesReferences in Scopus
 
dc.rightsApplied Physics Letters. Copyright © American Institute of Physics.
 
dc.rightsCopyright (2007) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in (Applied Physics Letters, 2007, v. 91 n. 10, article no. 103117) and may be found at (http://apl.aip.org/resource/1/applab/v91/i10/p103117_s1).
 
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License
 
dc.subjectCrystal growth
 
dc.subjectGallium nitride
 
dc.subjectMolecular vibrations
 
dc.subjectNitriding
 
dc.subjectRaman scattering
 
dc.title418 cm-1 Raman scattering from gallium nitride nanowires: Is it a vibration mode of N-rich Ga-N bond configuration?
 
dc.typeArticle
 
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Author Affiliations
  1. The University of Hong Kong
  2. City University of Hong Kong
  3. Peking University