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Article: Observation of ion gettering effect in high temperature superconducting oxide material

TitleObservation of ion gettering effect in high temperature superconducting oxide material
Authors
KeywordsPhysics engineering
Issue Date1996
PublisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Citation
Applied Physics Letters, 1996, v. 69 n. 11, p. 1629-1630 How to Cite?
AbstractIon gettering effect has been observed in high-temperature superconducting YBa2Cu3O7 material. Silicon ions were implanted into the material and subsequent high-temperature annealing produced ion movement from a low concentration region to a higher concentration region where the damage of the crystal structure is severe. This gettering effect could be used to make a superconductor-nonsuperconductor-superconductor trilayer structure within a single YBCO film.
Persistent Identifierhttp://hdl.handle.net/10722/53377
ISSN
2015 Impact Factor: 3.142
2015 SCImago Journal Rankings: 1.105
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorHong, SHen_HK
dc.contributor.authorChen, MLen_HK
dc.contributor.authorBaniecki, Jen_HK
dc.contributor.authorMa, Qen_HK
dc.contributor.authorWang, Aen_HK
dc.contributor.authorOdom, RWen_HK
dc.date.accessioned2009-04-03T07:18:08Z-
dc.date.available2009-04-03T07:18:08Z-
dc.date.issued1996en_HK
dc.identifier.citationApplied Physics Letters, 1996, v. 69 n. 11, p. 1629-1630en_HK
dc.identifier.issn0003-6951en_HK
dc.identifier.urihttp://hdl.handle.net/10722/53377-
dc.description.abstractIon gettering effect has been observed in high-temperature superconducting YBa2Cu3O7 material. Silicon ions were implanted into the material and subsequent high-temperature annealing produced ion movement from a low concentration region to a higher concentration region where the damage of the crystal structure is severe. This gettering effect could be used to make a superconductor-nonsuperconductor-superconductor trilayer structure within a single YBCO film.en_HK
dc.languageengen_HK
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/en_HK
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.rightsApplied Physics Letters. Copyright © American Institute of Physics.en_HK
dc.subjectPhysics engineeringen_HK
dc.titleObservation of ion gettering effect in high temperature superconducting oxide materialen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0003-6951&volume=69&issue=11&spage=1629&epage=1630&date=1996&atitle=Observation+of+ion+gettering+effect+in+high+temperature+superconducting+oxide+materialen_HK
dc.identifier.emailMa, Q: qyma@eee.hku.hken_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1063/1.117053en_HK
dc.identifier.hkuros26500-
dc.identifier.isiWOS:A1996VF48500044-

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