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Article: Mobility improvement of n-MOSFET's with nitrided gate oxide by backsurface Ar+ bombardment

TitleMobility improvement of n-MOSFET's with nitrided gate oxide by backsurface Ar+ bombardment
Authors
Issue Date1995
PublisherI E E E. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=55
Citation
Ieee Electron Device Letters, 1995, v. 16 n. 8, p. 354-356 How to Cite?
AbstractLow-energy (550 eV) argon-ion beam was used to bombard directly, the backsurface of nitrided n-MOSFET's after the completion of all conventional nMOS processing steps. The interface characteristics and inversion layer mobility of the MOS devices were investigated. The results show that, as bombardment time increases, interface state density and fixed charge density decrease first, and then the change slows down or even turns around. Correspondingly, the carrier mobility and drain conductance of the MOS devices are found to enhance first, and then saturate or turn around. Therefore, this simple technique, which is readily compatible with existing IC processing, is effective for restoring some of the lost device performance associated with gate-oxide nitridation.
Persistent Identifierhttp://hdl.handle.net/10722/42722
ISSN
2015 Impact Factor: 2.528
2015 SCImago Journal Rankings: 1.791
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorLai, PTen_HK
dc.contributor.authorXu, Zengen_HK
dc.contributor.authorLi, GQen_HK
dc.contributor.authorNg, WTen_HK
dc.date.accessioned2007-03-23T04:30:52Z-
dc.date.available2007-03-23T04:30:52Z-
dc.date.issued1995en_HK
dc.identifier.citationIeee Electron Device Letters, 1995, v. 16 n. 8, p. 354-356en_HK
dc.identifier.issn0741-3106en_HK
dc.identifier.urihttp://hdl.handle.net/10722/42722-
dc.description.abstractLow-energy (550 eV) argon-ion beam was used to bombard directly, the backsurface of nitrided n-MOSFET's after the completion of all conventional nMOS processing steps. The interface characteristics and inversion layer mobility of the MOS devices were investigated. The results show that, as bombardment time increases, interface state density and fixed charge density decrease first, and then the change slows down or even turns around. Correspondingly, the carrier mobility and drain conductance of the MOS devices are found to enhance first, and then saturate or turn around. Therefore, this simple technique, which is readily compatible with existing IC processing, is effective for restoring some of the lost device performance associated with gate-oxide nitridation.en_HK
dc.format.extent256638 bytes-
dc.format.extent27648 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypeapplication/msword-
dc.languageengen_HK
dc.publisherI E E E. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=55en_HK
dc.relation.ispartofIEEE Electron Device Lettersen_HK
dc.rights©1995 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.en_HK
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.titleMobility improvement of n-MOSFET's with nitrided gate oxide by backsurface Ar+ bombardmenten_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0741-3106&volume=16&issue=8&spage=354&epage=356&date=1995&atitle=Mobility+improvement+of+n-MOSFET%27s+with+nitrided+gate+oxide+by+backsurface+Ar++bombardmenten_HK
dc.identifier.emailLai, PT:laip@eee.hku.hken_HK
dc.identifier.authorityLai, PT=rp00130en_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1109/55.400736en_HK
dc.identifier.scopuseid_2-s2.0-0029359122en_HK
dc.identifier.hkuros12521-
dc.identifier.volume16en_HK
dc.identifier.issue8en_HK
dc.identifier.spage354en_HK
dc.identifier.epage356en_HK
dc.identifier.isiWOS:A1995RL03700004-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridLai, PT=7202946460en_HK
dc.identifier.scopusauthoridXu, Zeng=7405429249en_HK
dc.identifier.scopusauthoridLi, GQ=7407050307en_HK
dc.identifier.scopusauthoridNg, WT=7401613512en_HK

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