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Article: Refractive index of InGaN/GaN quantum well

TitleRefractive index of InGaN/GaN quantum well
Authors
KeywordsPhysics engineering
Issue Date1998
PublisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jsp
Citation
Journal Of Applied Physics, 1998, v. 84 n. 11, p. 6312-6317 How to Cite?
AbstractIn this article, the optical properties of the In xGa 1-xN/GaN quantum well (QW) are investigated. The refractive index spectrum of a QW is essential to the design and implementation of optoelectronic devices. Yet, the refractive index of the InGaN/GaN QW system over a wide spectral range has been unavailable so far. This article presents a comprehensive model, which includes the exciton effect and most of the major critical points, to calculate the complex index of refraction of the InGaN/GaN QW at room temperature. The calculations have been performed for QW's with various alloy compositions and well widths in the spectral range from 1 to 9 eV. The model presented here fully considers transitions near the band edge and above barrier gap contributions. © 1998 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/42389
ISSN
2015 Impact Factor: 2.101
2015 SCImago Journal Rankings: 0.603
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorLeung, MMYen_HK
dc.contributor.authorDjuriŝić, ABen_HK
dc.contributor.authorLi, EHen_HK
dc.date.accessioned2007-01-29T08:48:39Z-
dc.date.available2007-01-29T08:48:39Z-
dc.date.issued1998en_HK
dc.identifier.citationJournal Of Applied Physics, 1998, v. 84 n. 11, p. 6312-6317en_HK
dc.identifier.issn0021-8979en_HK
dc.identifier.urihttp://hdl.handle.net/10722/42389-
dc.description.abstractIn this article, the optical properties of the In xGa 1-xN/GaN quantum well (QW) are investigated. The refractive index spectrum of a QW is essential to the design and implementation of optoelectronic devices. Yet, the refractive index of the InGaN/GaN QW system over a wide spectral range has been unavailable so far. This article presents a comprehensive model, which includes the exciton effect and most of the major critical points, to calculate the complex index of refraction of the InGaN/GaN QW at room temperature. The calculations have been performed for QW's with various alloy compositions and well widths in the spectral range from 1 to 9 eV. The model presented here fully considers transitions near the band edge and above barrier gap contributions. © 1998 American Institute of Physics.en_HK
dc.format.extent138017 bytes-
dc.format.extent28672 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypeapplication/msword-
dc.languageengen_HK
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jspen_HK
dc.relation.ispartofJournal of Applied Physicsen_HK
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.subjectPhysics engineeringen_HK
dc.titleRefractive index of InGaN/GaN quantum wellen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0021-8979&volume=84&issue=11&spage=6312&epage=6317&date=1998&atitle=Refractive+index+of+InGaN/GaN+quantum+wellen_HK
dc.identifier.emailDjuriŝić, AB: dalek@hku.hken_HK
dc.identifier.authorityDjuriŝić, AB=rp00690en_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1063/1.368954en_HK
dc.identifier.scopuseid_2-s2.0-0000522945en_HK
dc.identifier.hkuros45893-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0000522945&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume84en_HK
dc.identifier.issue11en_HK
dc.identifier.spage6312en_HK
dc.identifier.epage6317en_HK
dc.identifier.isiWOS:000076930100072-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridLeung, MMY=7201943377en_HK
dc.identifier.scopusauthoridDjuriŝić, AB=7004904830en_HK
dc.identifier.scopusauthoridLi, EH=7201410087en_HK

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