Showing results 1 to 4 of 4
Title | Author(s) | Issue Date | Views | |
---|---|---|---|---|
3-D statistical simulation comparison of oxide reliability of planar MOSFETs and FinFET Journal:IEEE Transactions on Electron Devices | 2013 | 45 | ||
Accuracy and issues of the spectroscopic analysis of RTN traps in nanoscale MOSFETs Journal:IEEE Transactions on Electron Devices | 2013 | 42 | ||
RTN and BTI in nanoscale MOSFETs: A comprehensive statistical simulation study Journal:Solid-State Electronics | 2013 | 48 | ||
Statistical interactions of multiple oxide traps under BTI stress of nanoscale MOSFETs Journal:IEEE Electron Device Letters | 2013 | 44 |