Browse "Department of Physics" by Title
Jump to:
  0-9  |  A  |  B  |  C  |  D  |  E  |  F  |  G  |  H  |  I  |  J  |  K  |  L  |  M  |  N  |  O  |  P  |  Q  |  R  |  S  |  T  |  U  |  V  |  W  |  X  |  Y  |  Z  |   »
Results 3560 to 3579 of 3683
< Previous  Page 178 of 185  Next >
TypeTitleAuthor(s)YearViews
Vacancies in electron irradiated 6H silicon carbide studied by positron annihilation spectroscopyLam, CH; Ling, CC; Beling, CD; Fung, S; Weng, HM; Hang, DS2003328
 
Vacancy in 6H-silicon carbide studied by slow positron beamWang, HY; Weng, HM; Hang, DS; Zhou, XY; Ye, BJ; Fan, YM; Han, RD; Ling, CC; Hui, YP2003170
 
Vacancy-induced bound states in topological insulatorsShan, WY; Lu, J; Lu, HZ; Shen, SQ2011184
 
Vacancy-type defects in 6H-silicon carbide induced by He-implantation: A positron annihilation spectroscopy approachZhu, CY; Ling, CC; Brauer, G; Anwand, W; Skorupa, W2008607
 
Vacuum solutions of the gravitational field equations in the brane world modelHarko, TC; Mak, MK2004321
 
Validity of the t-J modelZhang, FC; Rice, TM199055
 
Valley and spin coupled physics in monolayers of MoS2 and other group VI dichalcogenidesYao, W201248
 
Valley and spin coupled physics in monolayers of MoS2 and other group VI dichalcogenidesYao, W201287
 
Valley based information processing in atomically thin group VI transition metal dichalcogenidesYao, W201247
 
Valley dependent optoelectronic phenomena in 2D transition metal dichalcogenidesYao, W201326
 
Valley dependent physics for potential information processing, from graphene to atomically thin transition metal dichalcogenidesYao, W201249
 
Valley dependent physics in grapheneYao, W20101,522
 
Valley dependent physics in grapheneYao, W2009676
 
Valley optoelectronics and spin-valley coupling: from graphene to monolayer group-VI transition metal dichalcogenidesYao, W201326
 
Valley physics from inversion symmetry breaking: from graphene to monolayer dichalcogenidesYao, W201334
 
Valley polarization in MoS2 monolayers by optical pumpingZeng, H; Dai, J; Yao, W; Xiao, D; Cui, X2012200
 
Valley-contrasting physics in graphene: Magnetic moment and topological transportXiao, D; Yao, W; Niu, Q200774
 
Valley-dependent optoelectronics from inversion symmetry breakingYao, W; Xiao, D; Niu, Q200873
 
The van der Waals epitaxy of Bi 2Se 3 on the vicinal Si(111) surface: An approach for preparing high-quality thin films of a topological insulatorLi, HD; Wang, ZY; Kan, X; Guo, X; He, HT; Wang, Z; Wang, JN; Wong, TL; Wang, N; Xie, MH2010420
 
Vapour adsorption and contact angles on hydrophobic solid surfacesLi, D; Xie, M; Neumann, AW199358
 
< Previous  Page 178 of 185  Next >
Export Records
Step 1: Select content and export format
  • Citation only
Step 2: Select export method
  • Download