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| Vacancy-induced bound states in topological insulators | Shan, WY; Lu, J; Lu, HZ; Shen, SQ | 2011 | 178 |
| Vacancy-type defects in 6H-silicon carbide induced by He-implantation: A positron annihilation spectroscopy approach | Zhu, CY; Ling, CC; Brauer, G; Anwand, W; Skorupa, W | 2008 | 605 |
| Vacuum solutions of the gravitational field equations in the brane world model | Harko, TC; Mak, MK | 2004 | 330 |
| Validity of the t-J model | Zhang, FC; Rice, TM | 1990 | 49 |
 | Valley and spin coupled physics in monolayers of MoS2 and other group VI dichalcogenides | Yao, W | 2012 | 46 |
| Valley and spin coupled physics in monolayers of MoS2 and other group VI dichalcogenides | Yao, W | 2012 | 40 |
| Valley based information processing in atomically thin group VI transition metal dichalcogenides | Yao, W | 2012 | 34 |
| Valley dependent physics for potential information processing, from graphene to atomically thin transition metal dichalcogenides | Yao, W | 2012 | 41 |
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| Valley dependent physics in graphene | Yao, W | 2009 | 692 |
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| Valley-contrasting physics in graphene: Magnetic moment and topological transport | Xiao, D; Yao, W; Niu, Q | 2007 | 49 |
| Valley-dependent optoelectronics from inversion symmetry breaking | Yao, W; Xiao, D; Niu, Q | 2008 | 55 |
| The van der Waals epitaxy of Bi 2Se 3 on the vicinal Si(111) surface: An approach for preparing high-quality thin films of a topological insulator | Li, HD; Wang, ZY; Kan, X; Guo, X; He, HT; Wang, Z; Wang, JN; Wong, TL; Wang, N; Xie, MH | 2010 | 389 |
| Vapour adsorption and contact angles on hydrophobic solid surfaces | Li, D; Xie, M; Neumann, AW | 1993 | 50 |
| Variable energy positron annihilation spectroscopy of GaN grown on sapphire substrates with MOCVD | Hu, YF; Beling, CD; Fung, S | 2005 | 50 |
| A variant transfer matrix method suitable for transport through multi-probe systems | Qiao, Z; Wang, J | 2007 | 150 |
| Variation of microphysics in wind bubbles: an alternative mechanism for explaining the rebrightenings in Gamma-ray burst afterglows | Kong, SW; Wong, AYL; Huang, YF; Cheng, KS | 2010 | 231 |
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