| Title | Author(s) | Year | View Count |
 | Identification of charge states of indium vacancies in InP | LiMing, W; Fung, S; Beling, CD | 1999 | 95 |
 | Identification of charge states of indium vacancies in InP using the positron-electron auto-correlation function | Liming, W; Fung, S; Beling, CD; Fuchs, M; Seitsonen, AP | 1998 | 121 |
 | Identification of vacancy-like defects in high-rate grown a-Si before and after ligh soaking by vepas | Zou, X; Chan, YC; Webb, DP; Lam, YW; Lin, SH; Chan, FYM; Hu, YF; Weng, X; Beling, CD; Fung, SHY | 1999 | 351 |
 | Identification of vacancy-like defects in high-rate grown a-Si before and after light soaking by VEPAS | Zou, X; Chan, YC; Webb, DP; Lam, YW; Lin, SH; Chan, FYM; Hu, YF; Weng, X; Beling, CD; Fung, S | 1999 | 33 |
 | Identification of very red counterparts of SiO maser and OH/IR objects in the GLIMPSE survey | Deguchi, S; Nakashima, JI; Kwok, S; Koning, N | 2007 | 115 |
 | Identification of Zn-vacancy-hydrogen complexes in ZnO single crystals: A challenge to positron annihilation spectroscopy | Brauer, G; Anwand, W; Grambole, D; Grenzer, J; Skorupa, W; Čížek, J; Kuriplach, J; Procházka, I; Ling, CC; So, CK; Schulz, D; Klimm, D | 2009 | 649 |
 | Identifying quantum topological phases through statistical correlation | Wang, H; Bauer, B; Troyer, M; Scarola, VW | 2011 | 68 |
 | Identities of the deep level defects E 1/E 2 in 6H silicon carbide | Ling, CC; Chen, XD; Gong, M; Weng, HM; Hang, DS; Beling, CD; Fung, S; Lam, TW; Lam, CH | 2004 | 36 |
 | Identities of the deep level defects E1/E2 in 6H silicon carbide | Ling, FCC; Chen, X; Gong, M; Weng, HM; Hang, DS; Beling, CD; Fung, SHY; Lam, TW; Lam, CH | 2004 | 133 |
 | III-nitride nanomaterials: Growth and properties | Djurisic, A; Cai, X; Xie, MH | 2008 | 260 |
 | Imaging spectroscopy of solar microwave radiation. I. Flaring emission | Lim, J; Gary, DE; Hurford, GJ; Lemen, JR | 1994 | 39 |
 | Imbalanced superfluid state in an annular disk | Ye, F; Chen, Y; Wang, ZD; Zhang, FC | 2009 | 281 |
 | Imbalanced superfluid state in an annulardisk | Ye, F; Chen, Y; Wang, ZD; Zhang, FC | 2009 | 40 |
 | Impact of electric currents on the insulator-metal phase transition in epitaxial thin films of La1-xAxMnO3 (A = Sr, Ca, and Ba) | Gao, J; Hu, F; Yao, H | 2006 | 154 |
 | Impact of the cap layer on the electronic structures and optical properties of self-assembled InAs/GaAs quantum dots | Wu, HB; Xu, SJ; Wang, J | 2006 | 37 |
 | Impacts of compressive strain on phase diagram of epitaxial Pr 0.5Sr0.5MnO3 films grown on LaAlO3 (0 0 1) | Chen, L; Chen, Y; Ma, Y; Lian, G; Xiong, G; Gao, J | 2011 | 559 |
 | Implementation of adiabatic geometric gates with superconducting phase qubits | Peng, ZH; Chu, HF; Wang, ZD; Zheng, DN | 2009 | 160 |
 | Implementation of fault-tolerant quantum computation with superconducting device | Xue, Zhengyuan.; 薛正远. | 2009 | 303 |
 | Implementation of quantum gates based on geometric phases accumulated in the eigenstates of periodic invariant operators | Shao, LB; Wang, ZD; Xing, DY | 2007 | 325 |
 | Implementation of universal quantum gates based on nonadiabatic geometric phases | Zhu, SL; Wang, ZD | 2002 | 413 |
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