| Title | Author(s) | Year | View Count |
 | Band gap renormalization and carrier localization effects in InGaN/GaN quantum-wells light emitting diodes with Si doped barriers | Wang, YJ; Xu, SJ; Li, Q; Zhao, DG; Yang, H | 2006 | 39 |
 | Band offset of GaAs/AlxGa1−xAs heterojunctions from atomistic first principles | Wang, Y; Zahid, F; Zhu, Y; Liu, L; Wang, J; Guo, H | 2013 | 3 |
| Band structure effects on one-dimensional resonant tunneling in STM tips made of carbon nanotubes | Gao, J; Sun, Q; Xie, XC; Gao, H | 2006 | 36 |
 | Band structure renormalization and weak pseudogap behavior in Na0.33 Co O2: Fluctuation exchange study based on a single-band model | Yao, ZJ; Li, JX; Wang, ZD | 2007 | 275 |
| Band structures and transport properties of zigzag graphene nanoribbons with antidot arrays | Zhang, YT; Li, QM; Li, YC; Zhang, YY; Zhai, F | 2010 | 263 |
| Barrier height change in very thin SiO2 films caused by charge injection | Chen, TP; Liu, Y; Sun, CQ; Fung, S | 2002 | 1,187 |
| Basic properties of gamma-ray loud blazars | Cheng, KS; Fan, JH; Zhang, L | 1999 | 124 |
| Ba¨cklund transformations, the Painleve̓ property and some of their applications | Wong, Wing-tak; 黃永德 | 1987 | 357 |
| BCS-BEC crossover induced by a synthetic non-Abelian gauge field | Vyasanakere, JP; Zhang, S; Shenoy, VB | 2011 | 60 |
| Beam optics studies for the planned hybrid electrostatic-magnetic guided slow positron beam in Hong Kong | LiMing, W; Melwani, SB; Beling, CD; Fung, S | 1995 | 137 |
| The Beaming Effect of Radiation Spectra from Blazars | Zhang, L; Cheng, KS; Fan, JH | 1997 | 137 |
| Beaming effects in gamma-ray burst afterglows | Huang, YF; Lu, T; Dai, ZG; Cheng, KS | 2003 | 86 |
| Beaming effects in GRBs and orphan afterglows | Huang, YF; Lu, T; Cheng, KS | 2005 | 90 |
| Beaming effects in GRBs and orphan afterglows | Huang, YF; Lu, T; Cheng, KS | 2005 | 85 |
| Berezinsky-Kosterlitz-Thouless transition in phase fluctuating superconductors with inhomogeneous Gaussian distributed couplings | Chen, C; Chen, C; Chen, Y; Wang, ZD | 2011 | 234 |
| Berry phase and its induced charge and spin currents in a ring of a double-exchange system | Liang, SD; Shen, SQ; Wang, ZD | 1999 | 299 |
| Berry phase effect on exciton transport and bose einstein condensate | Yao, W; Niu, Q | 2009 | 50 |
| Berry Phase Effect on Exciton Transport and Bose Einstein Condensation | Yao, W; Niu, Q | 2009 | 208 |
| Berry phase effect on the exciton transport and on the exciton Bose-Einstein condensate | Yao, W; Niu, Q | 2008 | 42 |
| Beryllium implantation induced deep level defects in p-type 6h-silicon carbide | Chen, XD; Ling, CC; Fung, S; Beling, CD; Gong, M; Henkel, T; Tanoue, H; Kobayashi, N | 2003 | 520 |
