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- Publisher Website: 10.1109/LED.2006.889519
- Scopus: eid_2-s2.0-33847352851
- WOS: WOS:000243915100008
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Article: Electrically bistable thin-film device based on PVK and GNPs polymer material
| Title | Electrically bistable thin-film device based on PVK and GNPs polymer material |
|---|---|
| Authors | |
| Keywords | Thin-film device Poly(N-vinylcarbazole) (PVK) Electrical bistability Memory effect Gold nanoparticle (GNP) |
| Issue Date | 2007 |
| Citation | IEEE Electron Device Letters, 2007, v. 28, n. 2, p. 107-110 How to Cite? |
| Abstract | We present an electrical-bistability device based on MIM-sandwiched structure. Poly(N-vinylcarbazole) (PVK) mixed with gold nanoparticles (GNPs) serve as the active layer between two metal electrodes. After applying a voltage, the as-fabricated device can transit from low conductivity state to high conductivity state. By simply using a reverse bias, the high conductivity state can return to the low conductivity state. An on/off current ratio as high as 10 at room temperature has been achieved. The memory effect is attributed to electric-field-induced charge transfer complex formed between the PVK and the GNPs. The device shows a good stability under stress test for both states and exhibits a high potential on Flash-type memory applications. © 2007 IEEE. 5 |
| Persistent Identifier | http://hdl.handle.net/10722/298392 |
| ISSN | 2021 Impact Factor: 4.816 2020 SCImago Journal Rankings: 1.337 |
| ISI Accession Number ID |
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Song, Y. | - |
| dc.contributor.author | Ling, Q. D. | - |
| dc.contributor.author | Lim, S. L. | - |
| dc.contributor.author | Teo, E. Y.H. | - |
| dc.contributor.author | Tan, Y. P. | - |
| dc.contributor.author | Li, L. | - |
| dc.contributor.author | Kang, E. T. | - |
| dc.contributor.author | Chan, D. S.H. | - |
| dc.contributor.author | Zhu, Chunxiang | - |
| dc.date.accessioned | 2021-04-08T03:08:19Z | - |
| dc.date.available | 2021-04-08T03:08:19Z | - |
| dc.date.issued | 2007 | - |
| dc.identifier.citation | IEEE Electron Device Letters, 2007, v. 28, n. 2, p. 107-110 | - |
| dc.identifier.issn | 0741-3106 | - |
| dc.identifier.uri | http://hdl.handle.net/10722/298392 | - |
| dc.description.abstract | We present an electrical-bistability device based on MIM-sandwiched structure. Poly(N-vinylcarbazole) (PVK) mixed with gold nanoparticles (GNPs) serve as the active layer between two metal electrodes. After applying a voltage, the as-fabricated device can transit from low conductivity state to high conductivity state. By simply using a reverse bias, the high conductivity state can return to the low conductivity state. An on/off current ratio as high as 10 at room temperature has been achieved. The memory effect is attributed to electric-field-induced charge transfer complex formed between the PVK and the GNPs. The device shows a good stability under stress test for both states and exhibits a high potential on Flash-type memory applications. © 2007 IEEE. 5 | - |
| dc.language | eng | - |
| dc.relation.ispartof | IEEE Electron Device Letters | - |
| dc.subject | Thin-film device | - |
| dc.subject | Poly(N-vinylcarbazole) (PVK) | - |
| dc.subject | Electrical bistability | - |
| dc.subject | Memory effect | - |
| dc.subject | Gold nanoparticle (GNP) | - |
| dc.title | Electrically bistable thin-film device based on PVK and GNPs polymer material | - |
| dc.type | Article | - |
| dc.description.nature | link_to_subscribed_fulltext | - |
| dc.identifier.doi | 10.1109/LED.2006.889519 | - |
| dc.identifier.scopus | eid_2-s2.0-33847352851 | - |
| dc.identifier.volume | 28 | - |
| dc.identifier.issue | 2 | - |
| dc.identifier.spage | 107 | - |
| dc.identifier.epage | 110 | - |
| dc.identifier.isi | WOS:000243915100008 | - |
| dc.identifier.issnl | 0741-3106 | - |