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- Publisher Website: 10.1109/IITC.2002.1014933
- Scopus: eid_2-s2.0-84961730203
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Conference Paper: TDDB reliability improvement in Cu damascene by using a bilayer-structured PECVD SiC dielectric barrier
Title | TDDB reliability improvement in Cu damascene by using a bilayer-structured PECVD SiC dielectric barrier |
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Authors | |
Issue Date | 2002 |
Citation | Proceedings of the IEEE 2002 International Interconnect Technology Conference, IITC 2002, 2002, p. 200-202 How to Cite? |
Abstract | This work investigates the thermal stability and barrier characteristics of two species of silicon carbide dielectric films, α-SiCN with a dielectric constant of 4.9 and α-SiC with a dielectric constant of 3.8. The TDDB lifetime of Cu damascene metallization structure is greatly improved by using a α-SiCN/α-SiC bilayer dielectric stack as the etching stop layer (ESL). This improvement is presumably due to the α-SiC dielectric's lower leakage current, absence of nitridation on Cu surface, and better adhesion on Cu as well as OSG intermetal dielectric (IMD), though the α-SiC film has a very slow deposition rate. We believe that the α-SiCN/α-SiC bilayer dielectric is a favorable combination for the ESL because α-SiCN can protect α-SiC from plasma attack during the photoresist stripping. |
Persistent Identifier | http://hdl.handle.net/10722/298146 |
DC Field | Value | Language |
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dc.contributor.author | Chiang, C. C. | - |
dc.contributor.author | Chen, M. C. | - |
dc.contributor.author | Wu, Z. C. | - |
dc.contributor.author | Li, L. J. | - |
dc.contributor.author | Jang, S. M. | - |
dc.contributor.author | Yu, C. H. | - |
dc.contributor.author | Liang, M. S. | - |
dc.date.accessioned | 2021-04-08T03:07:47Z | - |
dc.date.available | 2021-04-08T03:07:47Z | - |
dc.date.issued | 2002 | - |
dc.identifier.citation | Proceedings of the IEEE 2002 International Interconnect Technology Conference, IITC 2002, 2002, p. 200-202 | - |
dc.identifier.uri | http://hdl.handle.net/10722/298146 | - |
dc.description.abstract | This work investigates the thermal stability and barrier characteristics of two species of silicon carbide dielectric films, α-SiCN with a dielectric constant of 4.9 and α-SiC with a dielectric constant of 3.8. The TDDB lifetime of Cu damascene metallization structure is greatly improved by using a α-SiCN/α-SiC bilayer dielectric stack as the etching stop layer (ESL). This improvement is presumably due to the α-SiC dielectric's lower leakage current, absence of nitridation on Cu surface, and better adhesion on Cu as well as OSG intermetal dielectric (IMD), though the α-SiC film has a very slow deposition rate. We believe that the α-SiCN/α-SiC bilayer dielectric is a favorable combination for the ESL because α-SiCN can protect α-SiC from plasma attack during the photoresist stripping. | - |
dc.language | eng | - |
dc.relation.ispartof | Proceedings of the IEEE 2002 International Interconnect Technology Conference, IITC 2002 | - |
dc.title | TDDB reliability improvement in Cu damascene by using a bilayer-structured PECVD SiC dielectric barrier | - |
dc.type | Conference_Paper | - |
dc.description.nature | link_to_subscribed_fulltext | - |
dc.identifier.doi | 10.1109/IITC.2002.1014933 | - |
dc.identifier.scopus | eid_2-s2.0-84961730203 | - |
dc.identifier.spage | 200 | - |
dc.identifier.epage | 202 | - |