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Article: Monolayer Semiconductor Auger Detector

TitleMonolayer Semiconductor Auger Detector
Authors
KeywordsVan der Waals heterostructure
Exciton-hole Auger scattering
Tunneling barrier
Auger photocurrent
Weak excitation
Issue Date2020
PublisherAmerican Chemical Society. The Journal's web site is located at http://pubs.acs.org/nanolett
Citation
Nano Letters, 2020, v. 20 n. 7, p. 5538-5543 How to Cite?
AbstractAuger recombination in semiconductors is a many-body phenomenon in which the recombination of electrons and holes is accompanied by excitation of other charge carriers. The excess energy of the excited carriers is normally rapidly converted to heat, making Auger processes difficult to probe directly. Here, we employ a technique in which the Auger-excited carriers are detected by their ability to tunnel out of the semiconductor through a thin barrier, generating a current. We use vertical van der Waals heterostructures with monolayer WSe2 as the semiconductor, with hexagonal boron nitride as the tunnel barrier, and a graphite collector electrode. The Auger processes combined with resonant absorption produce characteristic negative photoconductance. We detect holes Auger-excited by both neutral and charged excitons and find that the Auger scattering is surprisingly strong under weak excitation. Our work expands the range of techniques available for probing relaxation processes in 2D materials.
Persistent Identifierhttp://hdl.handle.net/10722/285486
ISSN
2019 Impact Factor: 11.238
2015 SCImago Journal Rankings: 9.006
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorChow, CME-
dc.contributor.authorYu, H-
dc.contributor.authorSchaibley, JR-
dc.contributor.authorRivera, P-
dc.contributor.authorFinney, J-
dc.contributor.authorYan, J-
dc.contributor.authorMandrus, D-
dc.contributor.authorTaniguchi, T-
dc.contributor.authorWatanabe, K-
dc.contributor.authorYao, W-
dc.contributor.authorCobden, DH-
dc.contributor.authorXu, X-
dc.date.accessioned2020-08-18T03:53:53Z-
dc.date.available2020-08-18T03:53:53Z-
dc.date.issued2020-
dc.identifier.citationNano Letters, 2020, v. 20 n. 7, p. 5538-5543-
dc.identifier.issn1530-6984-
dc.identifier.urihttp://hdl.handle.net/10722/285486-
dc.description.abstractAuger recombination in semiconductors is a many-body phenomenon in which the recombination of electrons and holes is accompanied by excitation of other charge carriers. The excess energy of the excited carriers is normally rapidly converted to heat, making Auger processes difficult to probe directly. Here, we employ a technique in which the Auger-excited carriers are detected by their ability to tunnel out of the semiconductor through a thin barrier, generating a current. We use vertical van der Waals heterostructures with monolayer WSe2 as the semiconductor, with hexagonal boron nitride as the tunnel barrier, and a graphite collector electrode. The Auger processes combined with resonant absorption produce characteristic negative photoconductance. We detect holes Auger-excited by both neutral and charged excitons and find that the Auger scattering is surprisingly strong under weak excitation. Our work expands the range of techniques available for probing relaxation processes in 2D materials.-
dc.languageeng-
dc.publisherAmerican Chemical Society. The Journal's web site is located at http://pubs.acs.org/nanolett-
dc.relation.ispartofNano Letters-
dc.subjectVan der Waals heterostructure-
dc.subjectExciton-hole Auger scattering-
dc.subjectTunneling barrier-
dc.subjectAuger photocurrent-
dc.subjectWeak excitation-
dc.titleMonolayer Semiconductor Auger Detector-
dc.typeArticle-
dc.identifier.emailYao, W: wangyao@hku.hk-
dc.identifier.authorityYao, W=rp00827-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1021/acs.nanolett.0c02190-
dc.identifier.pmid32511929-
dc.identifier.scopuseid_2-s2.0-85088207443-
dc.identifier.hkuros312808-
dc.identifier.volume20-
dc.identifier.issue7-
dc.identifier.spage5538-
dc.identifier.epage5543-
dc.identifier.isiWOS:000548893200110-
dc.publisher.placeUnited States-
dc.identifier.issnl1530-6984-

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