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Conference Paper: Effects of Coulomb and Roughness Scatterings on 4H-SiC MOSFET

TitleEffects of Coulomb and Roughness Scatterings on 4H-SiC MOSFET
Authors
Zheng, YTang, WMChan, WTCheung, WKLee, HNChau, TLai, PT
KeywordsInterface trap density
MOSFET
Silicon carbide
Surface roughness
Issue Date2019
PublisherIEEE. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/conhome.jsp?punumber=1000853
Citation
Proceedings of 2019 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC), Xi'an, China, 12-14 June 2019, p. 1-3 How to Cite?
DOI: http://dx.doi.org/10.1109/EDSSC.2019.8754361
Abstract4H-SiC n-channel MOSFET at 300 K has been studied by using SILVACO TCAD simulation. Based on the good agreements between measured and simulated output characteristics, the components of channel mobility versus gate voltage are clearly illustrated. From the simulation results, the channel mobility degradations due to interface traps under low gate voltage and surface roughness under high gate voltage are analyzed numerically.
Persistent Identifierhttp://hdl.handle.net/10722/277815
ISBN
978-1-7281-0287-0

 

DC FieldValueLanguage
dc.contributor.authorZheng, Y-
dc.contributor.authorTang, WM-
dc.contributor.authorChan, WT-
dc.contributor.authorCheung, WK-
dc.contributor.authorLee, HN-
dc.contributor.authorChau, T-
dc.contributor.authorLai, PT-
dc.date.accessioned2019-10-04T08:01:54Z-
dc.date.available2019-10-04T08:01:54Z-
dc.date.issued2019-
dc.identifier.citationProceedings of 2019 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC), Xi'an, China, 12-14 June 2019, p. 1-3-
dc.identifier.isbn978-1-7281-0287-0-
dc.identifier.urihttp://hdl.handle.net/10722/277815-
dc.description.abstract4H-SiC n-channel MOSFET at 300 K has been studied by using SILVACO TCAD simulation. Based on the good agreements between measured and simulated output characteristics, the components of channel mobility versus gate voltage are clearly illustrated. From the simulation results, the channel mobility degradations due to interface traps under low gate voltage and surface roughness under high gate voltage are analyzed numerically.-
dc.languageeng-
dc.publisherIEEE. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/conhome.jsp?punumber=1000853-
dc.relation.ispartofIEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC)-
dc.rightsIEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC). Copyright © IEEE.-
dc.rights©2019 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.-
dc.subjectInterface trap density-
dc.subjectMOSFET-
dc.subjectSilicon carbide-
dc.subjectSurface roughness-
dc.titleEffects of Coulomb and Roughness Scatterings on 4H-SiC MOSFET-
dc.typeConference_Paper-
dc.identifier.emailLai, PT: laip@eee.hku.hk-
dc.identifier.authorityLai, PT=rp00130-
dc.identifier.doi10.1109/EDSSC.2019.8754361-
dc.identifier.scopuseid_2-s2.0-85070733069-
dc.identifier.hkuros306922-
dc.identifier.spage1-
dc.identifier.epage3-
dc.publisher.placeUnited States-

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