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Article: Coulomb effects on topological band inversion in the moiré of WSe2/BAs heterobilayer

TitleCoulomb effects on topological band inversion in the moiré of WSe2/BAs heterobilayer
Authors
KeywordsCoulomb interaction
heterobilayer
moiré pattern
QSH insulator
Issue Date2019
PublisherInstitute of Physics Publishing Ltd. The Journal's web site is located at http://iopscience.iop.org/2053-1583/
Citation
2D Materials, 2019, v. 6 n. 4, p. article no. 045037 How to Cite?
AbstractQuantum spin Hall (QSH) insulator with large gap is highly desirable for potential spintronics application. Here we realize electrically tunable QSH insulator with large gap in van der Waals heterobilayer of monolayer transition metal dichalcogenide (TMD) and hexagonal boron arsenide (BAs), in particular the WSe2/BAs heterobilayer. When the type II band alignment gets inverted in an electric field, the hybridization by interlayer hopping between the spin-valley locked valence band edges in TMD and the BAs conduction band edges leads to a stacking-configuration dependent topological band inversion. In the non-interacting limit, the double spin degeneracy of BAs leaves an un-hybridized conduction band inside the gap, so the heterobilayer is a spin-valley locked metal instead of a QSH insulator. With the Coulomb interaction accounted in the double-layer geometry, the interaction with the hybridization induced electric dipole shifts this un-hybridized conduction band upwards in energy, giving rise to a sizable global QSH gap. Consequently, this heterobilayer provides a platform for engineering electrically tunable QSH insulator with sizable band gap. In the long-period moiré pattern with the spatial variation of local stacking-configurations, the competition between Coulomb interaction and interlayer hopping leads to superstructures of QSH insulators and excitonic insulators.
Persistent Identifierhttp://hdl.handle.net/10722/277509
ISSN
2019 Impact Factor: 7.14
2015 SCImago Journal Rankings: 4.344
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorZhu, Q-
dc.contributor.authorTong, Q-
dc.contributor.authorSun, H-
dc.contributor.authorWang, Y-
dc.contributor.authorYao, W-
dc.date.accessioned2019-09-20T08:52:26Z-
dc.date.available2019-09-20T08:52:26Z-
dc.date.issued2019-
dc.identifier.citation2D Materials, 2019, v. 6 n. 4, p. article no. 045037-
dc.identifier.issn2053-1583-
dc.identifier.urihttp://hdl.handle.net/10722/277509-
dc.description.abstractQuantum spin Hall (QSH) insulator with large gap is highly desirable for potential spintronics application. Here we realize electrically tunable QSH insulator with large gap in van der Waals heterobilayer of monolayer transition metal dichalcogenide (TMD) and hexagonal boron arsenide (BAs), in particular the WSe2/BAs heterobilayer. When the type II band alignment gets inverted in an electric field, the hybridization by interlayer hopping between the spin-valley locked valence band edges in TMD and the BAs conduction band edges leads to a stacking-configuration dependent topological band inversion. In the non-interacting limit, the double spin degeneracy of BAs leaves an un-hybridized conduction band inside the gap, so the heterobilayer is a spin-valley locked metal instead of a QSH insulator. With the Coulomb interaction accounted in the double-layer geometry, the interaction with the hybridization induced electric dipole shifts this un-hybridized conduction band upwards in energy, giving rise to a sizable global QSH gap. Consequently, this heterobilayer provides a platform for engineering electrically tunable QSH insulator with sizable band gap. In the long-period moiré pattern with the spatial variation of local stacking-configurations, the competition between Coulomb interaction and interlayer hopping leads to superstructures of QSH insulators and excitonic insulators.-
dc.languageeng-
dc.publisherInstitute of Physics Publishing Ltd. The Journal's web site is located at http://iopscience.iop.org/2053-1583/-
dc.relation.ispartof2D Materials-
dc.rights2D Materials. Copyright © Institute of Physics Publishing Ltd.-
dc.rightsThis is an author-created, un-copyedited version of an article published in [insert name of journal]. IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at http://dx.doi.org/[insert DOI].-
dc.subjectCoulomb interaction-
dc.subjectheterobilayer-
dc.subjectmoiré pattern-
dc.subjectQSH insulator-
dc.titleCoulomb effects on topological band inversion in the moiré of WSe2/BAs heterobilayer-
dc.typeArticle-
dc.identifier.emailZhu, Q: qzzhu@hku.hk-
dc.identifier.emailYao, W: wangyao@hku.hk-
dc.identifier.authorityYao, W=rp00827-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1088/2053-1583/ab38d4-
dc.identifier.scopuseid_2-s2.0-85081949222-
dc.identifier.hkuros305947-
dc.identifier.volume6-
dc.identifier.issue4-
dc.identifier.spagearticle no. 045037-
dc.identifier.epagearticle no. 045037-
dc.identifier.isiWOS:000484249800003-
dc.publisher.placeUnited Kingdom-
dc.identifier.issnl2053-1583-

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