File Download

There are no files associated with this item.

  Links for fulltext
     (May Require Subscription)
Supplementary

Article: Effects of Water Layer on a Through Silicon Via by Using a KrF Excimer Laser

TitleEffects of Water Layer on a Through Silicon Via by Using a KrF Excimer Laser
Authors
KeywordsLaser drilling
Water layer effect
Through silicon via
Excimer laser
Issue Date2013
PublisherKorean Physical Society. The Journal's web site is located at http://www.npsm-kps.org
Citation
New Physics: Sae Mulli, 2013, v. 63 n. 4, p. 432-437 How to Cite?
AbstractWe investigated the effect of a water layer on a through silicon via (TSV) by using a KrF excimer laser. When we fabricated the via in air, we found debris and burrs around the via and confirmed by using Raman scattering spectroscopy and X-ray diffraction spectroscopy that those were due to amorphous silicon. Debris around the via surface was effectively reduced when we fabricated the via in the water layer. The fabrication time decreased with increasing pulse energy of the laser in all atmospheres, and a long time was needed to fabricate the via in a 3-mm water layer because of the bubbles near the substrate. In addition, we could fabricate a small-sized via in a water layer because the plasma was concentrated at the surface of the substrate. The size of the via was not influenced by the repetition rate of the laser in any of the atmospheres. Based on those results, we could fabricate an about 170-μm via, which had no debris or burrs, in a thin water layer by using a KrF excimer laser with a pulse energy of 100 mJ and a repetition rate of 12 Hz.
Persistent Identifierhttp://hdl.handle.net/10722/274636
ISSN

 

DC FieldValueLanguage
dc.contributor.authorKim, HL-
dc.contributor.authorShin, D-
dc.contributor.authorKim, HK-
dc.contributor.authorHwang, Y-
dc.date.accessioned2019-08-26T03:35:43Z-
dc.date.available2019-08-26T03:35:43Z-
dc.date.issued2013-
dc.identifier.citationNew Physics: Sae Mulli, 2013, v. 63 n. 4, p. 432-437-
dc.identifier.issn0374-4914-
dc.identifier.urihttp://hdl.handle.net/10722/274636-
dc.description.abstractWe investigated the effect of a water layer on a through silicon via (TSV) by using a KrF excimer laser. When we fabricated the via in air, we found debris and burrs around the via and confirmed by using Raman scattering spectroscopy and X-ray diffraction spectroscopy that those were due to amorphous silicon. Debris around the via surface was effectively reduced when we fabricated the via in the water layer. The fabrication time decreased with increasing pulse energy of the laser in all atmospheres, and a long time was needed to fabricate the via in a 3-mm water layer because of the bubbles near the substrate. In addition, we could fabricate a small-sized via in a water layer because the plasma was concentrated at the surface of the substrate. The size of the via was not influenced by the repetition rate of the laser in any of the atmospheres. Based on those results, we could fabricate an about 170-μm via, which had no debris or burrs, in a thin water layer by using a KrF excimer laser with a pulse energy of 100 mJ and a repetition rate of 12 Hz.-
dc.languagekor-
dc.publisherKorean Physical Society. The Journal's web site is located at http://www.npsm-kps.org-
dc.relation.ispartofNew Physics: Sae Mulli-
dc.subjectLaser drilling-
dc.subjectWater layer effect-
dc.subjectThrough silicon via-
dc.subjectExcimer laser-
dc.titleEffects of Water Layer on a Through Silicon Via by Using a KrF Excimer Laser-
dc.typeArticle-
dc.identifier.emailShin, D: dmshin@hku.hk-
dc.identifier.authorityShin, D=rp02569-
dc.description.naturelink_to_OA_fulltext-
dc.identifier.doi10.3938/NPSM.63.432-
dc.identifier.volume63-
dc.identifier.issue4-
dc.identifier.spage432-
dc.identifier.epage437-
dc.publisher.placeRepublic of Korea-

Export via OAI-PMH Interface in XML Formats


OR


Export to Other Non-XML Formats