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- Publisher Website: 10.3740/MRSK.2014.24.4.186
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Article: Improvement of electrodeposition rate of Cu layer by heat treatment of electroless Cu seed layer
Title | Improvement of electrodeposition rate of Cu layer by heat treatment of electroless Cu seed layer |
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Authors | |
Keywords | Electrodeposition Electroplating Electroless plating Cu seed layer |
Issue Date | 2014 |
Citation | Korean Journal of Materials Research, 2014, v. 24, n. 4, p. 186-193 How to Cite? |
Abstract | A thin Cu seed layer for electroplating has been employed for decades in the miniaturization and integration of printed circuit board (PCB), however many problems are still caused by the thin Cu seed layer, e.g., open circuit faults in PCB, dimple defects, low conductivity, and etc. Here, we studied the effect of heat treatment of the thin Cu seed layer on the deposition rate of electroplated Cu. We investigated the heat-treatment effect on the crystallite size, morphology, electrical properties, and electrodeposition thickness by X-ray diffraction (XRD), atomic force microscope (AFM), four point probe (FPP), and scanning electron microscope (SEM) measurements, respectively. The results showed that post heat treatment of the thin Cu seed layer could improve surface roughness as well as electrical conductivity. Moreover, the deposition rate of electroplated Cu was improved about 148% by heat treatment of the Cu seed layer, indicating that the enhanced electrical conductivity and surface roughness accelerated the formation of Cu nuclei during electroplating. We also confirmed that the electrodeposition rate in the via filling process was also accelerated by heat-treating the Cu seed layer. © Materials Research Society of Korea. |
Persistent Identifier | http://hdl.handle.net/10722/273667 |
ISSN | 2020 SCImago Journal Rankings: 0.153 |
ISI Accession Number ID |
DC Field | Value | Language |
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dc.contributor.author | Kwon Byungkoog, B. | - |
dc.contributor.author | Shin, Dong Myeong | - |
dc.contributor.author | Kim, Hyung Kook | - |
dc.contributor.author | Hwang, Yoon Hwae | - |
dc.date.accessioned | 2019-08-12T09:56:19Z | - |
dc.date.available | 2019-08-12T09:56:19Z | - |
dc.date.issued | 2014 | - |
dc.identifier.citation | Korean Journal of Materials Research, 2014, v. 24, n. 4, p. 186-193 | - |
dc.identifier.issn | 1225-0562 | - |
dc.identifier.uri | http://hdl.handle.net/10722/273667 | - |
dc.description.abstract | A thin Cu seed layer for electroplating has been employed for decades in the miniaturization and integration of printed circuit board (PCB), however many problems are still caused by the thin Cu seed layer, e.g., open circuit faults in PCB, dimple defects, low conductivity, and etc. Here, we studied the effect of heat treatment of the thin Cu seed layer on the deposition rate of electroplated Cu. We investigated the heat-treatment effect on the crystallite size, morphology, electrical properties, and electrodeposition thickness by X-ray diffraction (XRD), atomic force microscope (AFM), four point probe (FPP), and scanning electron microscope (SEM) measurements, respectively. The results showed that post heat treatment of the thin Cu seed layer could improve surface roughness as well as electrical conductivity. Moreover, the deposition rate of electroplated Cu was improved about 148% by heat treatment of the Cu seed layer, indicating that the enhanced electrical conductivity and surface roughness accelerated the formation of Cu nuclei during electroplating. We also confirmed that the electrodeposition rate in the via filling process was also accelerated by heat-treating the Cu seed layer. © Materials Research Society of Korea. | - |
dc.language | eng | - |
dc.relation.ispartof | Korean Journal of Materials Research | - |
dc.subject | Electrodeposition | - |
dc.subject | Electroplating | - |
dc.subject | Electroless plating | - |
dc.subject | Cu seed layer | - |
dc.title | Improvement of electrodeposition rate of Cu layer by heat treatment of electroless Cu seed layer | - |
dc.type | Article | - |
dc.description.nature | published_or_final_version | - |
dc.identifier.doi | 10.3740/MRSK.2014.24.4.186 | - |
dc.identifier.scopus | eid_2-s2.0-84902961562 | - |
dc.identifier.volume | 24 | - |
dc.identifier.issue | 4 | - |
dc.identifier.spage | 186 | - |
dc.identifier.epage | 193 | - |
dc.identifier.isi | WOS:000421296000003 | - |
dc.identifier.issnl | 1225-0562 | - |