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Article: Realizing high performance n-type PbTe by synergistically optimizing effective mass and carrier mobility and suppressing bipolar thermal conductivity

TitleRealizing high performance n-type PbTe by synergistically optimizing effective mass and carrier mobility and suppressing bipolar thermal conductivity
Authors
KeywordsCarrier mobility
Energy gap
IV-VI semiconductors
Lead alloys
Manganese alloys
Issue Date2018
PublisherRSC Publications. The Journal's web site is located at http://pubs.rsc.org/en/journals/journalissues/ee#!recentarticles&all
Citation
Energy & Environmental Science, 2018, v. 11 n. 9, p. 2486-2495 How to Cite?
AbstractThermoelectric materials enable direct inter-conversion between electrical energy and thermal energy. The conversion efficiency is limited by their complex interdependent thermoelectric parameters. Here, we report that the electrical and thermal transport properties of n-type PbTe can be simultaneously improved by introducing just one component, MnTe. We obtained a maximum ZT of ∼1.6 at 773 K and an average ZTave of >1.0 at 300–873 K in n-type MnTe alloyed PbTe. This remarkably enhanced performance arises from the triple functions of MnTe alloying: (1) making the conduction band flatter to increase the effective mass from 0.31 me to 0.45 me; (2) enlarging the band gap of PbTe to suppress the bipolar thermal conductivity; and (3) introducing point defects instead of nanoprecipitates to reduce the lattice thermal conductivity while maintaining a relatively high carrier mobility. Our results indicate that high performance can be achieved in n-type PbTe by integrating different but synergistic concepts.
Persistent Identifierhttp://hdl.handle.net/10722/272230
ISSN
2017 Impact Factor: 30.067
2015 SCImago Journal Rankings: 10.475

 

DC FieldValueLanguage
dc.contributor.authorXiao, Y-
dc.contributor.authorWu, H-
dc.contributor.authorCUI, J-
dc.contributor.authorWang, D-
dc.contributor.authorFu, L-
dc.contributor.authorZhang, Y-
dc.contributor.authorChen, Y-
dc.contributor.authorHe, J-
dc.contributor.authorPennycook, SJ-
dc.contributor.authorZhao, LD-
dc.date.accessioned2019-07-20T10:38:14Z-
dc.date.available2019-07-20T10:38:14Z-
dc.date.issued2018-
dc.identifier.citationEnergy & Environmental Science, 2018, v. 11 n. 9, p. 2486-2495-
dc.identifier.issn1754-5692-
dc.identifier.urihttp://hdl.handle.net/10722/272230-
dc.description.abstractThermoelectric materials enable direct inter-conversion between electrical energy and thermal energy. The conversion efficiency is limited by their complex interdependent thermoelectric parameters. Here, we report that the electrical and thermal transport properties of n-type PbTe can be simultaneously improved by introducing just one component, MnTe. We obtained a maximum ZT of ∼1.6 at 773 K and an average ZTave of >1.0 at 300–873 K in n-type MnTe alloyed PbTe. This remarkably enhanced performance arises from the triple functions of MnTe alloying: (1) making the conduction band flatter to increase the effective mass from 0.31 me to 0.45 me; (2) enlarging the band gap of PbTe to suppress the bipolar thermal conductivity; and (3) introducing point defects instead of nanoprecipitates to reduce the lattice thermal conductivity while maintaining a relatively high carrier mobility. Our results indicate that high performance can be achieved in n-type PbTe by integrating different but synergistic concepts.-
dc.languageeng-
dc.publisherRSC Publications. The Journal's web site is located at http://pubs.rsc.org/en/journals/journalissues/ee#!recentarticles&all-
dc.relation.ispartofEnergy & Environmental Science-
dc.subjectCarrier mobility-
dc.subjectEnergy gap-
dc.subjectIV-VI semiconductors-
dc.subjectLead alloys-
dc.subjectManganese alloys-
dc.titleRealizing high performance n-type PbTe by synergistically optimizing effective mass and carrier mobility and suppressing bipolar thermal conductivity-
dc.typeArticle-
dc.identifier.emailChen, Y: yuechen@hku.hk-
dc.identifier.authorityChen, Y=rp01925-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1039/C8EE01151F-
dc.identifier.scopuseid_2-s2.0-85053620768-
dc.identifier.hkuros298939-
dc.identifier.volume11-
dc.identifier.issue9-
dc.identifier.spage2486-
dc.identifier.epage2495-
dc.publisher.placeUnited Kingdom-

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