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Article: Point contact bipolar resistive switching observed in transparent ZnMgO/ZnO:Ga heterostructure

TitlePoint contact bipolar resistive switching observed in transparent ZnMgO/ZnO:Ga heterostructure
Authors
KeywordsGallium compounds
II-VI semiconductors
Magnesium compounds
Point contacts
Pulsed laser deposition
Issue Date2019
PublisherSpringer New York LLC. The Journal's web site is located at http://springerlink.metapress.com/openurl.asp?genre=journal&issn=0957-4522
Citation
Journal of Materials Science: Materials in Electronics, 2019, v. 30 n. 7, p. 7080-7086 How to Cite?
AbstractTransparent ZnMgO/ZnO:Ga/c-sapphire hetero-structures with an optical transmittance of 73% in the visible region were fabricated by pulsed laser deposition technique. Bipolar resistive switching is observed in this structure with a simple contact approach, (i.e. across a W pin on top of the ZnMgO surface and another connected to the ZnO:Ga which acts as the transparent electrode). Conduction mechanisms for low resistance state (LRS) was explained by Ohmic behavior, but for high resistance state (HRS) Schottky emission model was used to explain for the conduction behavior. Moreover, the memory effect, good retention and endurance characteristics of the fabricated ZnMgO/GaZnO/c-sapphire device suggest its prospective application for the transparent resistive random-access memory devices.
Persistent Identifierhttp://hdl.handle.net/10722/271144
ISSN
2019 Impact Factor: 2.22
2015 SCImago Journal Rankings: 0.553

 

DC FieldValueLanguage
dc.contributor.authorAzeem, W-
dc.contributor.authorSu, S-
dc.contributor.authorHo, LP-
dc.contributor.authorYounas, M-
dc.contributor.authorAzad, F-
dc.contributor.authorRASHID, R-
dc.date.accessioned2019-06-24T01:04:10Z-
dc.date.available2019-06-24T01:04:10Z-
dc.date.issued2019-
dc.identifier.citationJournal of Materials Science: Materials in Electronics, 2019, v. 30 n. 7, p. 7080-7086-
dc.identifier.issn0957-4522-
dc.identifier.urihttp://hdl.handle.net/10722/271144-
dc.description.abstractTransparent ZnMgO/ZnO:Ga/c-sapphire hetero-structures with an optical transmittance of 73% in the visible region were fabricated by pulsed laser deposition technique. Bipolar resistive switching is observed in this structure with a simple contact approach, (i.e. across a W pin on top of the ZnMgO surface and another connected to the ZnO:Ga which acts as the transparent electrode). Conduction mechanisms for low resistance state (LRS) was explained by Ohmic behavior, but for high resistance state (HRS) Schottky emission model was used to explain for the conduction behavior. Moreover, the memory effect, good retention and endurance characteristics of the fabricated ZnMgO/GaZnO/c-sapphire device suggest its prospective application for the transparent resistive random-access memory devices.-
dc.languageeng-
dc.publisherSpringer New York LLC. The Journal's web site is located at http://springerlink.metapress.com/openurl.asp?genre=journal&issn=0957-4522-
dc.relation.ispartofJournal of Materials Science: Materials in Electronics-
dc.rightsThe final publication is available at Springer via http://dx.doi.org/[insert DOI]-
dc.subjectGallium compounds-
dc.subjectII-VI semiconductors-
dc.subjectMagnesium compounds-
dc.subjectPoint contacts-
dc.subjectPulsed laser deposition-
dc.titlePoint contact bipolar resistive switching observed in transparent ZnMgO/ZnO:Ga heterostructure-
dc.typeArticle-
dc.identifier.emailAzeem, W: azeemw89@hku.hk-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1007/s10854-019-01024-6-
dc.identifier.scopuseid_2-s2.0-85063265857-
dc.identifier.hkuros297982-
dc.identifier.volume30-
dc.identifier.issue7-
dc.identifier.spage7080-
dc.identifier.epage7086-
dc.publisher.placeUnited States-

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