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Conference Paper: GaN Monolithic Integration for Lighting and Display

TitleGaN Monolithic Integration for Lighting and Display
Authors
Issue Date2018
Citation
The 6th International Conference on Light-Emitting Devices and Their Industrial Applications (LEDIA ’18), Yokohama, Kanagawa, Japan, 25-27 April 2018 How to Cite?
AbstractThe monolithic integration of optoelectronic and electronic devices on the GaN platform for lighting and display is discussed. Optoelectronic devices include red, green and blue LEDs achieved by strain manipulation, while SB-MOSFETs and BJTs are candidates as electronic devices.
DescriptionInvited talk - LEDIA Session 4: Advanced Devices II - no. LEDIA4-1
Persistent Identifierhttp://hdl.handle.net/10722/268709

 

DC FieldValueLanguage
dc.contributor.authorChoi, HW-
dc.date.accessioned2019-03-28T01:30:29Z-
dc.date.available2019-03-28T01:30:29Z-
dc.date.issued2018-
dc.identifier.citationThe 6th International Conference on Light-Emitting Devices and Their Industrial Applications (LEDIA ’18), Yokohama, Kanagawa, Japan, 25-27 April 2018-
dc.identifier.urihttp://hdl.handle.net/10722/268709-
dc.descriptionInvited talk - LEDIA Session 4: Advanced Devices II - no. LEDIA4-1-
dc.description.abstractThe monolithic integration of optoelectronic and electronic devices on the GaN platform for lighting and display is discussed. Optoelectronic devices include red, green and blue LEDs achieved by strain manipulation, while SB-MOSFETs and BJTs are candidates as electronic devices.-
dc.languageeng-
dc.relation.ispartof6th International Conference on Light-Emitting Devices and Their Industrial Applications (LEDIA ’18)-
dc.titleGaN Monolithic Integration for Lighting and Display -
dc.typeConference_Paper-
dc.identifier.emailChoi, HW: hwchoi@hku.hk-
dc.identifier.authorityChoi, HW=rp00108-
dc.identifier.hkuros294366-

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