File Download

There are no files associated with this item.

  Links for fulltext
     (May Require Subscription)
Supplementary

Article: Well-width-dependent carrier lifetime in AIGaN/AIGaN quantum wells

TitleWell-width-dependent carrier lifetime in AIGaN/AIGaN quantum wells
Authors
Issue Date2007
Citation
Applied Physics Letters, 2007, v. 90, n. 13 How to Cite?
AbstractA set of Al0.35Ga0.65N/Al0.49Ga 0.51N multiple quantum wells (MQWs) with fixed barrier width and well widths varying from 1.65 to 5.0 nm has been grown by metal-organic chemical vapor deposition. Carrier dynamics in the MQWs were studied using time-resolved photoluminescence (PL) spectroscopy and light-induced transient grating (four wave mixing) technique. The authors observed that the lifetime of nonequilibrium carriers (excitons) increases with decreasing well width and interpreted the effect by stronger localization preventing their migration to nonradiative recombination centers. Meanwhile the radiative decay time is also influenced by screening of the built-in electric field, which spatially separates the electrons and holes. It is shown that this effect affects the initial part of PL intensity decay after pulsed excitation. It becomes more pronounced with increase in the initial carrier density but saturates when the carrier density is high enough to completely screen the built-in electric field. The screening effect on PL decay is stronger in wider quantum wells. © 2007 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/265790
ISSN
2017 Impact Factor: 3.495
2015 SCImago Journal Rankings: 1.105
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorMickevičius, J.-
dc.contributor.authorTamulaitis, G.-
dc.contributor.authorKuokštis, E.-
dc.contributor.authorLiu, K.-
dc.contributor.authorShur, M. S.-
dc.contributor.authorZhang, J. P.-
dc.contributor.authorGaska, R.-
dc.date.accessioned2018-12-03T01:21:42Z-
dc.date.available2018-12-03T01:21:42Z-
dc.date.issued2007-
dc.identifier.citationApplied Physics Letters, 2007, v. 90, n. 13-
dc.identifier.issn0003-6951-
dc.identifier.urihttp://hdl.handle.net/10722/265790-
dc.description.abstractA set of Al0.35Ga0.65N/Al0.49Ga 0.51N multiple quantum wells (MQWs) with fixed barrier width and well widths varying from 1.65 to 5.0 nm has been grown by metal-organic chemical vapor deposition. Carrier dynamics in the MQWs were studied using time-resolved photoluminescence (PL) spectroscopy and light-induced transient grating (four wave mixing) technique. The authors observed that the lifetime of nonequilibrium carriers (excitons) increases with decreasing well width and interpreted the effect by stronger localization preventing their migration to nonradiative recombination centers. Meanwhile the radiative decay time is also influenced by screening of the built-in electric field, which spatially separates the electrons and holes. It is shown that this effect affects the initial part of PL intensity decay after pulsed excitation. It becomes more pronounced with increase in the initial carrier density but saturates when the carrier density is high enough to completely screen the built-in electric field. The screening effect on PL decay is stronger in wider quantum wells. © 2007 American Institute of Physics.-
dc.languageeng-
dc.relation.ispartofApplied Physics Letters-
dc.titleWell-width-dependent carrier lifetime in AIGaN/AIGaN quantum wells-
dc.typeArticle-
dc.description.natureLink_to_subscribed_fulltext-
dc.identifier.doi10.1063/1.2717145-
dc.identifier.scopuseid_2-s2.0-34047163490-
dc.identifier.volume90-
dc.identifier.issue13-
dc.identifier.spagenull-
dc.identifier.epagenull-
dc.identifier.isiWOS:000245317100028-

Export via OAI-PMH Interface in XML Formats


OR


Export to Other Non-XML Formats