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Article: Intrinsic Two-Dimensional Ferroelectricity with Dipole Locking

TitleIntrinsic Two-Dimensional Ferroelectricity with Dipole Locking
Authors
Issue Date2018
PublisherAmerican Physical Society. The Journal's web site is located at http://prl.aps.org
Citation
Physical Review Letters, 2018, v. 120 n. 22, p. 227601 How to Cite?
AbstractOut-of-plane ferroelectricity with a high transition temperature in ultrathin films is important for the exploration of new domain physics and scaling down of memory devices. However, depolarizing electrostatic fields and interfacial chemical bonds can destroy this long-range polar order at two-dimensional (2D) limit. Here we report the experimental discovery of the locking between out-of-plane dipoles and in-plane lattice asymmetry in atomically thin In 2 Se 3 crystals, a new stabilization mechanism leading to our observation of intrinsic 2D out-of-plane ferroelectricity. Through second harmonic generation spectroscopy and piezoresponse force microscopy, we found switching of out-of-plane electric polarization requires a flip of nonlinear optical polarization that corresponds to the inversion of in-plane lattice orientation. The polar order shows a very high transition temperature ( ∼ 700     K ) without the assistance of extrinsic screening. This finding of intrinsic 2D ferroelectricity resulting from dipole locking opens up possibilities to explore 2D multiferroic physics and develop ultrahigh density memory devices.
Persistent Identifierhttp://hdl.handle.net/10722/262565
ISSN
2017 Impact Factor: 8.839
2015 SCImago Journal Rankings: 3.731

 

DC FieldValueLanguage
dc.contributor.authorXiao, J-
dc.contributor.authorZhu, H-
dc.contributor.authorWang, Y-
dc.contributor.authorFeng, W-
dc.contributor.authorHu, Y-
dc.contributor.authorDasgupta, A-
dc.contributor.authorHan, Y-
dc.contributor.authorWang, Y-
dc.contributor.authorMuller, DA-
dc.contributor.authorMartin, LW-
dc.contributor.authorHu, P-
dc.contributor.authorZhang, X-
dc.date.accessioned2018-10-02T04:43:09Z-
dc.date.available2018-10-02T04:43:09Z-
dc.date.issued2018-
dc.identifier.citationPhysical Review Letters, 2018, v. 120 n. 22, p. 227601-
dc.identifier.issn0031-9007-
dc.identifier.urihttp://hdl.handle.net/10722/262565-
dc.description.abstractOut-of-plane ferroelectricity with a high transition temperature in ultrathin films is important for the exploration of new domain physics and scaling down of memory devices. However, depolarizing electrostatic fields and interfacial chemical bonds can destroy this long-range polar order at two-dimensional (2D) limit. Here we report the experimental discovery of the locking between out-of-plane dipoles and in-plane lattice asymmetry in atomically thin In 2 Se 3 crystals, a new stabilization mechanism leading to our observation of intrinsic 2D out-of-plane ferroelectricity. Through second harmonic generation spectroscopy and piezoresponse force microscopy, we found switching of out-of-plane electric polarization requires a flip of nonlinear optical polarization that corresponds to the inversion of in-plane lattice orientation. The polar order shows a very high transition temperature ( ∼ 700     K ) without the assistance of extrinsic screening. This finding of intrinsic 2D ferroelectricity resulting from dipole locking opens up possibilities to explore 2D multiferroic physics and develop ultrahigh density memory devices.-
dc.languageeng-
dc.publisherAmerican Physical Society. The Journal's web site is located at http://prl.aps.org-
dc.relation.ispartofPhysical Review Letters-
dc.rightsPhysical Review Letters. Copyright © American Physical Society.-
dc.titleIntrinsic Two-Dimensional Ferroelectricity with Dipole Locking-
dc.typeArticle-
dc.identifier.emailZhang, X: president@hku.hk-
dc.identifier.authorityZhang, X=rp02411-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1103/PhysRevLett.120.227601-
dc.identifier.volume120-
dc.identifier.issue22-
dc.identifier.spage227601-
dc.identifier.epage227601-
dc.publisher.placeUnited States-

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