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Article: Hole doping in epitaxial MoSe2 monolayer by nitrogen plasma treatment

TitleHole doping in epitaxial MoSe2 monolayer by nitrogen plasma treatment
Authors
Issue Date2018
PublisherIOP Publishing. The Journal's web site is located at http://iopscience.iop.org/2053-1583/
Citation
2D Materials, 2018, v. 5 n. 4, p. 041005:1-8 How to Cite?
Persistent Identifierhttp://hdl.handle.net/10722/260567
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorXIA, Y-
dc.contributor.authorWang, B-
dc.contributor.authorZHANG, J-
dc.contributor.authorFeng, Y-
dc.contributor.authorLi, B-
dc.contributor.authorRen, X-
dc.contributor.authorTian, H-
dc.contributor.authorXu, J-
dc.contributor.authorHo, WK-
dc.contributor.authorXu, H-
dc.contributor.authorLiu, C-
dc.contributor.authorJin, CH-
dc.contributor.authorXie, MH-
dc.date.accessioned2018-09-14T08:43:51Z-
dc.date.available2018-09-14T08:43:51Z-
dc.date.issued2018-
dc.identifier.citation2D Materials, 2018, v. 5 n. 4, p. 041005:1-8-
dc.identifier.urihttp://hdl.handle.net/10722/260567-
dc.languageeng-
dc.publisherIOP Publishing. The Journal's web site is located at http://iopscience.iop.org/2053-1583/-
dc.relation.ispartof2D Materials-
dc.rights2D Materials. Copyright © IOP Publishing.-
dc.titleHole doping in epitaxial MoSe2 monolayer by nitrogen plasma treatment-
dc.typeArticle-
dc.identifier.emailXu, J: jpxu@HKUCC-COM.hku.hk-
dc.identifier.emailHo, WK: howk@hku.hk-
dc.identifier.emailXie, MH: physhead@hku.hk-
dc.identifier.authorityXie, MH=rp00818-
dc.identifier.doi10.1088/2053-1583/aadb5c-
dc.identifier.hkuros290469-
dc.identifier.volume5-
dc.identifier.issue4-
dc.identifier.spage041005:1-
dc.identifier.epage041005:8-
dc.identifier.isiWOS:000443770700001-

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