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Article: Explaining relative spectral red shifts in InGaN/GaN micropillars
Title | Explaining relative spectral red shifts in InGaN/GaN micropillars |
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Authors | |
Issue Date | 2018 |
Publisher | Optical Society of America: Open Access Journals. The Journal's web site is located at https://www.osapublishing.org/optica/home.cfm |
Citation | Optica, 2018, v. 5 n. 7, p. 765-773 How to Cite? |
Abstract | There is common agreement that dimensional downscaling of III-nitride light-emitting diodes leads to spectral blue shifts due to strain relaxation of the quantum wells (QWs). Near-field photoluminescence (nf-PL) mapping of micropillars with InGaN/GaN QWs of different indium compositions using scanning near-field optical spectroscopy reveals that the nf-PL spectrum blue-shifts at the edge of a micropillar with respect to the center for QWs with a high indium composition, whereas a relative red shift is observed for QWs with a low indium composition. This observation suggests that the strain relaxation mechanism in micropillars is dependent on the indium composition, evident from changes in lattice parameters determined from calibrated diffraction patterns obtained by transmission electron microscopy. As indicated by molecular dynamics simulations, the strain of a micropillar is influenced by competing strain relaxation mechanisms between the lattice mismatch strain from the QWs, and residual strain from other layers and their interactions with the edge of the micropillar. First-principle calculations of GaN/InGaN/GaN heterostructures confirmed the effect of strain relaxation on the potential profiles, and, thus, on the spectral shifts from the micropillars. The findings of this work provide insight into strain-induced band profile engineering in optoelectronic devices built on lattice-mismatched systems. |
Persistent Identifier | http://hdl.handle.net/10722/259281 |
ISSN | 2021 Impact Factor: 10.644 2020 SCImago Journal Rankings: 5.074 |
ISI Accession Number ID |
DC Field | Value | Language |
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dc.contributor.author | Fu, WY | - |
dc.contributor.author | Choi, HW | - |
dc.date.accessioned | 2018-09-03T04:04:23Z | - |
dc.date.available | 2018-09-03T04:04:23Z | - |
dc.date.issued | 2018 | - |
dc.identifier.citation | Optica, 2018, v. 5 n. 7, p. 765-773 | - |
dc.identifier.issn | 2334-2536 | - |
dc.identifier.uri | http://hdl.handle.net/10722/259281 | - |
dc.description.abstract | There is common agreement that dimensional downscaling of III-nitride light-emitting diodes leads to spectral blue shifts due to strain relaxation of the quantum wells (QWs). Near-field photoluminescence (nf-PL) mapping of micropillars with InGaN/GaN QWs of different indium compositions using scanning near-field optical spectroscopy reveals that the nf-PL spectrum blue-shifts at the edge of a micropillar with respect to the center for QWs with a high indium composition, whereas a relative red shift is observed for QWs with a low indium composition. This observation suggests that the strain relaxation mechanism in micropillars is dependent on the indium composition, evident from changes in lattice parameters determined from calibrated diffraction patterns obtained by transmission electron microscopy. As indicated by molecular dynamics simulations, the strain of a micropillar is influenced by competing strain relaxation mechanisms between the lattice mismatch strain from the QWs, and residual strain from other layers and their interactions with the edge of the micropillar. First-principle calculations of GaN/InGaN/GaN heterostructures confirmed the effect of strain relaxation on the potential profiles, and, thus, on the spectral shifts from the micropillars. The findings of this work provide insight into strain-induced band profile engineering in optoelectronic devices built on lattice-mismatched systems. | - |
dc.language | eng | - |
dc.publisher | Optical Society of America: Open Access Journals. The Journal's web site is located at https://www.osapublishing.org/optica/home.cfm | - |
dc.relation.ispartof | Optica | - |
dc.rights | © 2018 Optical Society of America. Users may use, reuse, and build upon the article, or use the article for text or data mining, so long as such uses are for non-commercial purposes and appropriate attribution is maintained. All other rights are reserved. | - |
dc.title | Explaining relative spectral red shifts in InGaN/GaN micropillars | - |
dc.type | Article | - |
dc.identifier.email | Fu, WY: wyfu@hku.hk | - |
dc.identifier.email | Choi, HW: hwchoi@hku.hk | - |
dc.identifier.authority | Fu, WY=rp02840 | - |
dc.identifier.authority | Choi, HW=rp00108 | - |
dc.description.nature | published_or_final_version | - |
dc.identifier.doi | 10.1364/OPTICA.5.000765 | - |
dc.identifier.scopus | eid_2-s2.0-85051380311 | - |
dc.identifier.hkuros | 288874 | - |
dc.identifier.volume | 5 | - |
dc.identifier.issue | 7 | - |
dc.identifier.spage | 765 | - |
dc.identifier.epage | 773 | - |
dc.identifier.eissn | 2334-2536 | - |
dc.identifier.isi | WOS:000439429000002 | - |
dc.publisher.place | United States | - |
dc.identifier.issnl | 2334-2536 | - |