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Article: Nonvolatile MoS2 field effect transistors directly gated by single crystalline epitaxial ferroelectric

TitleNonvolatile MoS2 field effect transistors directly gated by single crystalline epitaxial ferroelectric
Authors
Issue Date2017
PublisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Citation
Applied Physics Letters, 2017, v. 111 n. 2, p. Article number 023104 How to Cite?
AbstractWe demonstrate non-volatile, n-type, back-gated, MoS2 transistors, placed directly on an epitaxial grown, single crystalline, PbZr0.2Ti0.8O3 (PZT) ferroelectric. The transistors show decent ON current (19 μA/μm), high on-off ratio (107), and a subthreshold swing of (SS ∼ 92 mV/dec) with a 100 nm thick PZT layer as the back gate oxide. Importantly, the ferroelectric polarization can directly control the channel charge, showing a clear anti-clockwise hysteresis. We have self-consistently confirmed the switching of the ferroelectric and corresponding change in channel current from a direct time-dependent measurement. Our results demonstrate that it is possible to obtain transistor operation directly on polar surfaces, and therefore, it should be possible to integrate 2D electronics with single crystalline functional oxides. © 2017 Author(s).
Persistent Identifierhttp://hdl.handle.net/10722/257383
ISSN
2015 Impact Factor: 3.142
2015 SCImago Journal Rankings: 1.105

 

DC FieldValueLanguage
dc.contributor.authorLu, Z-
dc.contributor.authorSerrao, C-
dc.contributor.authorKhan, AI-
dc.contributor.authorYou, L-
dc.contributor.authorWong, JC-
dc.contributor.authorYe, Y-
dc.contributor.authorZhu, H-
dc.contributor.authorZhang, X-
dc.contributor.authorSalahuddin, S-
dc.date.accessioned2018-07-30T03:10:04Z-
dc.date.available2018-07-30T03:10:04Z-
dc.date.issued2017-
dc.identifier.citationApplied Physics Letters, 2017, v. 111 n. 2, p. Article number 023104-
dc.identifier.issn0003-6951-
dc.identifier.urihttp://hdl.handle.net/10722/257383-
dc.description.abstractWe demonstrate non-volatile, n-type, back-gated, MoS2 transistors, placed directly on an epitaxial grown, single crystalline, PbZr0.2Ti0.8O3 (PZT) ferroelectric. The transistors show decent ON current (19 μA/μm), high on-off ratio (107), and a subthreshold swing of (SS ∼ 92 mV/dec) with a 100 nm thick PZT layer as the back gate oxide. Importantly, the ferroelectric polarization can directly control the channel charge, showing a clear anti-clockwise hysteresis. We have self-consistently confirmed the switching of the ferroelectric and corresponding change in channel current from a direct time-dependent measurement. Our results demonstrate that it is possible to obtain transistor operation directly on polar surfaces, and therefore, it should be possible to integrate 2D electronics with single crystalline functional oxides. © 2017 Author(s).-
dc.languageeng-
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/-
dc.relation.ispartofApplied Physics Letters-
dc.rightsApplied Physics Letters. Copyright © American Institute of Physics.-
dc.rightsAfter publication: Copyright (year) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in (citation of published article) and may be found at (URL/link for published article abstract). Before publication: The following article has been submitted to/accepted by [Name of Journal]. After it is published, it will be found at (URL/link to the entry page of the journal).-
dc.titleNonvolatile MoS2 field effect transistors directly gated by single crystalline epitaxial ferroelectric-
dc.typeArticle-
dc.identifier.emailZhang, X: president@hku.hk-
dc.identifier.authorityZhang, X=rp02411-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1063/1.4992113-
dc.identifier.scopuseid_2-s2.0-85024094560-
dc.identifier.volume111-
dc.identifier.issue2-
dc.identifier.spageArticle number 023104-
dc.identifier.epageArticle number 023104-
dc.publisher.placeUnited States-

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