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Article: Exciton-dominant electroluminescence from a diode of monolayer MoS2

TitleExciton-dominant electroluminescence from a diode of monolayer MoS2
Authors
Issue Date2014
PublisherAIP Publishing LLC. The Journal's web site is located at http://apl.aip.org/
Citation
Applied Physics Letters, 2014, v. 104 n. 19, article no. 193508 How to Cite?
AbstractIn two-dimensional monolayer MoS2, excitons dominate the absorption and emission properties. However, the low electroluminescent efficiency and signal-to-noise ratio limit our understanding of the excitonic behavior of electroluminescence. Here, we study the microscopic origin of the electroluminescence from a diode of monolayer MoS2fabricated on a heavily p-type doped silicon substrate. Direct and bound-exciton related recombination processes are identified from the electroluminescence. At a high electron-hole pair injection rate, Auger recombination of the exciton-exciton annihilation of the bound exciton emission is observed at room temperature. Moreover, the efficient electrical injection demonstrated here allows for the observation of a higher energy exciton peak of 2.255 eV in the monolayer MoS2diode, attributed to the excited exciton state of a direct-exciton transition. © 2014 AIP Publishing LLC.
Persistent Identifierhttp://hdl.handle.net/10722/257275
ISSN
2017 Impact Factor: 3.495
2015 SCImago Journal Rankings: 1.105
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorYe, Yu-
dc.contributor.authorYe, Ziliang-
dc.contributor.authorGharghi, Majid-
dc.contributor.authorZhu, Hanyu-
dc.contributor.authorZhao, Mervin-
dc.contributor.authorWang, Yuan-
dc.contributor.authorYin, Xiaobo-
dc.contributor.authorZhang, Xiang-
dc.date.accessioned2018-07-24T08:59:20Z-
dc.date.available2018-07-24T08:59:20Z-
dc.date.issued2014-
dc.identifier.citationApplied Physics Letters, 2014, v. 104 n. 19, article no. 193508-
dc.identifier.issn0003-6951-
dc.identifier.urihttp://hdl.handle.net/10722/257275-
dc.description.abstractIn two-dimensional monolayer MoS2, excitons dominate the absorption and emission properties. However, the low electroluminescent efficiency and signal-to-noise ratio limit our understanding of the excitonic behavior of electroluminescence. Here, we study the microscopic origin of the electroluminescence from a diode of monolayer MoS2fabricated on a heavily p-type doped silicon substrate. Direct and bound-exciton related recombination processes are identified from the electroluminescence. At a high electron-hole pair injection rate, Auger recombination of the exciton-exciton annihilation of the bound exciton emission is observed at room temperature. Moreover, the efficient electrical injection demonstrated here allows for the observation of a higher energy exciton peak of 2.255 eV in the monolayer MoS2diode, attributed to the excited exciton state of a direct-exciton transition. © 2014 AIP Publishing LLC.-
dc.languageeng-
dc.publisherAIP Publishing LLC. The Journal's web site is located at http://apl.aip.org/-
dc.relation.ispartofApplied Physics Letters-
dc.titleExciton-dominant electroluminescence from a diode of monolayer MoS2-
dc.typeArticle-
dc.description.natureLink_to_subscribed_fulltext-
dc.identifier.doi10.1063/1.4875959-
dc.identifier.scopuseid_2-s2.0-84900860280-
dc.identifier.volume104-
dc.identifier.issue19-
dc.identifier.spagearticle no. 193508-
dc.identifier.epagearticle no. 193508-
dc.identifier.isiWOS:000336918600072-

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