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Conference Paper: λ-size silicon modulator

Titleλ-size silicon modulator
Authors
Issue Date2012
Citation
Integrated Photonics Research, Silicon and Nanophotonics (IPRSN 2012), Colorado Springs, CO, 17-20 June 2012 How to Cite?
AbstractWe report an experimental demonstration of a 3λ-size, silicon waveguide-integrated electro-optic modulator with a record high extinction ratio exceeding 1dB/μm, extremely low insertion loss (-1dB) in the ON-state, and an ultra-broadband (>0.5μm) bandwidth based on freecarrier switching in ITO. © 2012 Optical Society of America.
Persistent Identifierhttp://hdl.handle.net/10722/257182
ISBN

 

DC FieldValueLanguage
dc.contributor.authorSorger, V. J.-
dc.contributor.authorLanzillotti-Kimura, N. D.-
dc.contributor.authorMa, R. M.-
dc.contributor.authorZhang, X.-
dc.date.accessioned2018-07-24T08:59:04Z-
dc.date.available2018-07-24T08:59:04Z-
dc.date.issued2012-
dc.identifier.citationIntegrated Photonics Research, Silicon and Nanophotonics (IPRSN 2012), Colorado Springs, CO, 17-20 June 2012-
dc.identifier.isbn978-155752946-6-
dc.identifier.urihttp://hdl.handle.net/10722/257182-
dc.description.abstractWe report an experimental demonstration of a 3λ-size, silicon waveguide-integrated electro-optic modulator with a record high extinction ratio exceeding 1dB/μm, extremely low insertion loss (-1dB) in the ON-state, and an ultra-broadband (>0.5μm) bandwidth based on freecarrier switching in ITO. © 2012 Optical Society of America.-
dc.languageeng-
dc.relation.ispartofIntegrated Photonics Research, Silicon and Nanophotonics, IPRSN 2012-
dc.titleλ-size silicon modulator-
dc.typeConference_Paper-
dc.description.natureLink_to_subscribed_fulltext-
dc.identifier.scopuseid_2-s2.0-84893057863-
dc.identifier.spagenull-
dc.identifier.epagenull-

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