File Download

There are no files associated with this item.

  Links for fulltext
     (May Require Subscription)
Supplementary

Conference Paper: Excimer laser induced heating, melting, and mass diffusion in crystal silicon in nanosecond and nanometer scale

TitleExcimer laser induced heating, melting, and mass diffusion in crystal silicon in nanosecond and nanometer scale
Authors
KeywordsUltrashallow junction
Excimer laser
Boron diffusion
Issue Date1996
Citation
Proceedings of SPIE - The International Society for Optical Engineering, 1996, v. 2703, p. 232-241 How to Cite?
AbstractHeat and mass transfer at the nanosecond time scale and the nanometer length scale in pulsed laser fabrication of ultra-shallow p+-junction is studied in this work. A technique is developed to fabricate the ultra-shallow p+-junctions with pulsed laser doping of crystalline silicon with a solid spin-on-glass (SOG) dopant, through the nanosecond pulsed laser heating, melting, and boron mass diffusion in the 100 nm thin silicon layer close to the surface. High boron concentration of 1020atoms/cc and the 'box-like' junction profile are achieved. The key mechanism determining the 'box-like' junction shape is found to be the melt-solid interface limited diffusion. The ultra-shallow p+-junctions with the depth from 30 nm to 400 nm are successfully made by the excimer laser. The optimal laser fluence condition for SOG doping is found about 0.6 - 0.8 J/cm2by studying the ultra-shallow p+-junction boron profiles measured by the secondary ion mass spectroscopy versus the laser fluence and the pulse number. The 1D numerical analysis agrees reasonably with the experiment, within the available physical picture. Possible mechanisms such as boron diffusivity dependence on the dopant concentration in the molten silicon are proposed. ©2005 Copyright SPIE - The International Society for Optical Engineering.
Persistent Identifierhttp://hdl.handle.net/10722/256989
ISSN

 

DC FieldValueLanguage
dc.contributor.authorZhang, X.-
dc.contributor.authorHo, J. R.-
dc.contributor.authorGrigoropoulos, Constantine P.-
dc.date.accessioned2018-07-24T08:58:32Z-
dc.date.available2018-07-24T08:58:32Z-
dc.date.issued1996-
dc.identifier.citationProceedings of SPIE - The International Society for Optical Engineering, 1996, v. 2703, p. 232-241-
dc.identifier.issn0277-786X-
dc.identifier.urihttp://hdl.handle.net/10722/256989-
dc.description.abstractHeat and mass transfer at the nanosecond time scale and the nanometer length scale in pulsed laser fabrication of ultra-shallow p+-junction is studied in this work. A technique is developed to fabricate the ultra-shallow p+-junctions with pulsed laser doping of crystalline silicon with a solid spin-on-glass (SOG) dopant, through the nanosecond pulsed laser heating, melting, and boron mass diffusion in the 100 nm thin silicon layer close to the surface. High boron concentration of 1020atoms/cc and the 'box-like' junction profile are achieved. The key mechanism determining the 'box-like' junction shape is found to be the melt-solid interface limited diffusion. The ultra-shallow p+-junctions with the depth from 30 nm to 400 nm are successfully made by the excimer laser. The optimal laser fluence condition for SOG doping is found about 0.6 - 0.8 J/cm2by studying the ultra-shallow p+-junction boron profiles measured by the secondary ion mass spectroscopy versus the laser fluence and the pulse number. The 1D numerical analysis agrees reasonably with the experiment, within the available physical picture. Possible mechanisms such as boron diffusivity dependence on the dopant concentration in the molten silicon are proposed. ©2005 Copyright SPIE - The International Society for Optical Engineering.-
dc.languageeng-
dc.relation.ispartofProceedings of SPIE - The International Society for Optical Engineering-
dc.subjectUltrashallow junction-
dc.subjectExcimer laser-
dc.subjectBoron diffusion-
dc.titleExcimer laser induced heating, melting, and mass diffusion in crystal silicon in nanosecond and nanometer scale-
dc.typeConference_Paper-
dc.description.natureLink_to_subscribed_fulltext-
dc.identifier.doi10.1117/12.237733-
dc.identifier.scopuseid_2-s2.0-58049205752-
dc.identifier.volume2703-
dc.identifier.spage232-
dc.identifier.epage241-

Export via OAI-PMH Interface in XML Formats


OR


Export to Other Non-XML Formats