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Article: Thermal and carrier transport originating from photon recycling and non-radiative recombination in laser micromachining of GaAs thin films

TitleThermal and carrier transport originating from photon recycling and non-radiative recombination in laser micromachining of GaAs thin films
Authors
Issue Date2003
Citation
Applied Physics A: Materials Science and Processing, 2003, v. 76, n. 2, p. 261-267 How to Cite?
AbstractCoupled thermal and carrier transports (electron/ hole generation, recombination, diffusion and drifting) in laser photoetching of GaAs thin film is investigated. A new volumetric heating mechanism originating from SRH (Shockley-Read-Hall) non-radiative recombination and photon recycling is proposed and modeled based on recent experimental findings. Both volumetric SRH heating and Joule heating are found to be important in the carrier transport, as well as the etching process. SRH heating and Joule heating are primarily confined within the space-charge region, which is about 20 nm from the GaAs surface. The surface temperature rises rapidly as the laser intensity exceeds 105W/m2. Below a laser intensity of 105W/m2, the thermal effect is negligible. The etch rate is found to be dependent on the competition between photovoltaic and photothermal effects on surface potential. At high laser intensity, the etch rate is increased by more than 100%, due to SRH and Joule heating.
Persistent Identifierhttp://hdl.handle.net/10722/256875
ISSN
2015 Impact Factor: 1.444
2015 SCImago Journal Rankings: 0.535

 

DC FieldValueLanguage
dc.contributor.authorZhang, Xiang-
dc.contributor.authorWen, J.-
dc.contributor.authorSun, C.-
dc.date.accessioned2018-07-24T08:58:11Z-
dc.date.available2018-07-24T08:58:11Z-
dc.date.issued2003-
dc.identifier.citationApplied Physics A: Materials Science and Processing, 2003, v. 76, n. 2, p. 261-267-
dc.identifier.issn0947-8396-
dc.identifier.urihttp://hdl.handle.net/10722/256875-
dc.description.abstractCoupled thermal and carrier transports (electron/ hole generation, recombination, diffusion and drifting) in laser photoetching of GaAs thin film is investigated. A new volumetric heating mechanism originating from SRH (Shockley-Read-Hall) non-radiative recombination and photon recycling is proposed and modeled based on recent experimental findings. Both volumetric SRH heating and Joule heating are found to be important in the carrier transport, as well as the etching process. SRH heating and Joule heating are primarily confined within the space-charge region, which is about 20 nm from the GaAs surface. The surface temperature rises rapidly as the laser intensity exceeds 105W/m2. Below a laser intensity of 105W/m2, the thermal effect is negligible. The etch rate is found to be dependent on the competition between photovoltaic and photothermal effects on surface potential. At high laser intensity, the etch rate is increased by more than 100%, due to SRH and Joule heating.-
dc.languageeng-
dc.relation.ispartofApplied Physics A: Materials Science and Processing-
dc.titleThermal and carrier transport originating from photon recycling and non-radiative recombination in laser micromachining of GaAs thin films-
dc.typeArticle-
dc.description.natureLink_to_subscribed_fulltext-
dc.identifier.doi10.1007/s00339-002-1448-y-
dc.identifier.scopuseid_2-s2.0-0037290916-
dc.identifier.volume76-
dc.identifier.issue2-
dc.identifier.spage261-
dc.identifier.epage267-

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