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Article: Reversible Tuning of Ferromagnetism and Resistive Switching in ZnO/Cu Thin Films

TitleReversible Tuning of Ferromagnetism and Resistive Switching in ZnO/Cu Thin Films
Authors
Issue Date2017
PublisherAmerican Chemical Society: Open Access Titles. The Journal's web site is located at http://pubs.acs.org/journal/acsodf
Citation
ACS Omega, 2017, v. 2 n. 12, p. 8810-8817 How to Cite?
AbstractSystematic magnetic, electronic, and electrical studies on the Cu0.04Zn0.96O/Ga0.01Zn0.99O cell structure grown on (001) sapphire by the pulsed laser deposition technique show that the Cu multivalent (CuM+) ions modulate magnetic and resistive states of the cells. The magnetic moment is found to be reduced by ∼30% during the high resistance state (HRS) to low resistance state (LRS) switching. X-ray photoelectron spectroscopy results reveals an increase of the Cu+/Cu2+ oxidation state ratio (which has been determined by the relative positions of the Fermi level and the Cu acceptor level) during the HRS to LRS transition. This decreases the effective spin-polarized Cu2+–Vö–Cu+ channels and thus the magnetic moment. A conduction mechanism involving the formation of conductive filaments from the coupling of the CuM+ ions and Vö has been suggested.
Persistent Identifierhttp://hdl.handle.net/10722/250628
ISSN
2019 Impact Factor: 2.87
PubMed Central ID
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorYounas, M-
dc.contributor.authorXu, C-
dc.contributor.authorArshad, M-
dc.contributor.authorHo, LP-
dc.contributor.authorZhou, SQ-
dc.contributor.authorAzad, F-
dc.contributor.authorAkhtar, MJ-
dc.contributor.authorSu, S-
dc.contributor.authorAzeem, W-
dc.contributor.authorLing, FCC-
dc.date.accessioned2018-01-18T04:29:58Z-
dc.date.available2018-01-18T04:29:58Z-
dc.date.issued2017-
dc.identifier.citationACS Omega, 2017, v. 2 n. 12, p. 8810-8817-
dc.identifier.issn2470-1343-
dc.identifier.urihttp://hdl.handle.net/10722/250628-
dc.description.abstractSystematic magnetic, electronic, and electrical studies on the Cu0.04Zn0.96O/Ga0.01Zn0.99O cell structure grown on (001) sapphire by the pulsed laser deposition technique show that the Cu multivalent (CuM+) ions modulate magnetic and resistive states of the cells. The magnetic moment is found to be reduced by ∼30% during the high resistance state (HRS) to low resistance state (LRS) switching. X-ray photoelectron spectroscopy results reveals an increase of the Cu+/Cu2+ oxidation state ratio (which has been determined by the relative positions of the Fermi level and the Cu acceptor level) during the HRS to LRS transition. This decreases the effective spin-polarized Cu2+–Vö–Cu+ channels and thus the magnetic moment. A conduction mechanism involving the formation of conductive filaments from the coupling of the CuM+ ions and Vö has been suggested.-
dc.languageeng-
dc.publisherAmerican Chemical Society: Open Access Titles. The Journal's web site is located at http://pubs.acs.org/journal/acsodf-
dc.relation.ispartofACS Omega-
dc.rightsCopyright © 2017 American Chemical Society. This is an open access article published under an ACS AuthorChoice License, which permits copying and redistribution of the article or any adaptations for non-commercial purposes.-
dc.titleReversible Tuning of Ferromagnetism and Resistive Switching in ZnO/Cu Thin Films-
dc.typeArticle-
dc.identifier.emailHo, LP: lpho@graduate.hku.hk-
dc.identifier.emailSu, S: scsu@hku.hk-
dc.identifier.emailLing, FCC: ccling@hkucc.hku.hk-
dc.identifier.authorityLing, FCC=rp00747-
dc.description.naturepublished_or_final_version-
dc.identifier.doi10.1021/acsomega.7b01192-
dc.identifier.pmid31457411-
dc.identifier.pmcidPMC6645539-
dc.identifier.scopuseid_2-s2.0-85063271045-
dc.identifier.hkuros284056-
dc.identifier.volume2-
dc.identifier.issue12-
dc.identifier.spage8810-
dc.identifier.epage8817-
dc.identifier.isiWOS:000418744400032-
dc.publisher.placeUnited States-

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