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Article: Strain controlled switching effects in phosphorene and GeS

TitleStrain controlled switching effects in phosphorene and GeS
Authors
Issue Date2017
Citation
Nanotechnology, 2017, v. 28 n. 43, article no. 435202 How to Cite?
Persistent Identifierhttp://hdl.handle.net/10722/246101
ISSN
2019 Impact Factor: 3.551
2015 SCImago Journal Rankings: 1.196
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorLi, B-
dc.contributor.authorWang, Y-
dc.contributor.authorXie, Y-
dc.contributor.authorZhu, L-
dc.contributor.authorYao, K-
dc.date.accessioned2017-09-18T02:22:26Z-
dc.date.available2017-09-18T02:22:26Z-
dc.date.issued2017-
dc.identifier.citationNanotechnology, 2017, v. 28 n. 43, article no. 435202-
dc.identifier.issn0957-4484-
dc.identifier.urihttp://hdl.handle.net/10722/246101-
dc.languageeng-
dc.relation.ispartofNanotechnology-
dc.titleStrain controlled switching effects in phosphorene and GeS-
dc.typeArticle-
dc.identifier.emailWang, Y: yinwang@hku.hk-
dc.identifier.authorityWang, Y=rp01851-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1088/1361-6528/aa87ff-
dc.identifier.scopuseid_2-s2.0-85031099851-
dc.identifier.hkuros277433-
dc.identifier.volume28-
dc.identifier.issue43-
dc.identifier.spagearticle no. 435202-
dc.identifier.epagearticle no. 435202-
dc.identifier.eissn1361-6528-
dc.identifier.isiWOS:000412203300001-

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