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Article: Investigation of the behaviour of electronic resistive switching memory based on MoSe2-doped ultralong Se microwires

TitleInvestigation of the behaviour of electronic resistive switching memory based on MoSe<font size=-1><sub>2</sub></font>-doped ultralong Se microwires
Authors
Issue Date2016
PublisherAIP Publishing. The Journal's web site is located at http://apl.aip.org/
Citation
Applied Physics Letters, 2016, v. 109 n. 14, p. 143904:1-5 How to Cite?
Persistent Identifierhttp://hdl.handle.net/10722/242496

 

DC FieldValueLanguage
dc.contributor.authorZhou, GD-
dc.contributor.authorSun, B-
dc.contributor.authorYao, YQ-
dc.contributor.authorhang, HH-
dc.contributor.authorZhou, AK-
dc.contributor.authorAlameh, K-
dc.contributor.authorDing, BF-
dc.contributor.authorSong, QL-
dc.date.accessioned2017-07-24T01:40:32Z-
dc.date.available2017-07-24T01:40:32Z-
dc.date.issued2016-
dc.identifier.citationApplied Physics Letters, 2016, v. 109 n. 14, p. 143904:1-5-
dc.identifier.urihttp://hdl.handle.net/10722/242496-
dc.languageeng-
dc.publisherAIP Publishing. The Journal's web site is located at http://apl.aip.org/-
dc.relation.ispartofApplied Physics Letters-
dc.titleInvestigation of the behaviour of electronic resistive switching memory based on MoSe<font size=-1><sub>2</sub></font>-doped ultralong Se microwires -
dc.typeArticle-
dc.identifier.doi10.1063/1.4962655-
dc.identifier.hkuros273273-
dc.identifier.volume109-
dc.identifier.issue14-
dc.identifier.spage143904:1-
dc.identifier.epage5-

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