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Conference Paper: Zn-vacancy related defects in ZnO grown by pulsed laser deposition

TitleZn-vacancy related defects in ZnO grown by pulsed laser deposition
Authors
Issue Date2017
PublisherS P I E - International Society for Optical Engineering. The Journal's web site is located at http://spie.org/x1848.xml?WT.svl=mddp2
Citation
SPIE Oxide-based Materials and Devices VIII Conference, San Francisco, California, United States, 29 January–1 February 2017. In Proceedings of SPIE, 2017, v. 10105, p. 101050F:1-9 How to Cite?
AbstractUndoped and Ga-doped ZnO (002) films were grown c-sapphire using the pulsed laser deposition (PLD) method. Znvacancy related defects in the films were studied by different positron annihilation spectroscopy (PAS). These included Doppler broadening spectroscopy (DBS) employing a continuous monenergetic positron beam, and positron lifetime spectroscopy using a pulsed monoenergetic positron beam attached to an electron linear accelerator. Two kinds of Znvacancy related defects namely a monovacancy and a divacancy were identified in the films. In as-grown undoped samples grown with relatively low oxygen pressure P(O2)≤1.3 Pa, monovacancy is the dominant Zn-vacancy related defect. Annealing these samples at 900 oC induced Zn out-diffusion into the substrate and converted the monovacancy to divacancy. For the undoped samples grown with high P(O2)=5 Pa irrespective of the annealing temperature and the as-grown degenerate Ga-doped sample (n=1020 cm-3), divacancy is the dominant Zn-vacancy related defect. The clustering of vacancy will be discussed.
Persistent Identifierhttp://hdl.handle.net/10722/242397
ISSN
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorLing, FCC-
dc.contributor.authorLuo, CQ-
dc.contributor.authorWang, ZL-
dc.contributor.authorAnwand, W-
dc.contributor.authorWagner, A-
dc.date.accessioned2017-07-24T01:39:18Z-
dc.date.available2017-07-24T01:39:18Z-
dc.date.issued2017-
dc.identifier.citationSPIE Oxide-based Materials and Devices VIII Conference, San Francisco, California, United States, 29 January–1 February 2017. In Proceedings of SPIE, 2017, v. 10105, p. 101050F:1-9-
dc.identifier.issn0277-786X-
dc.identifier.urihttp://hdl.handle.net/10722/242397-
dc.description.abstractUndoped and Ga-doped ZnO (002) films were grown c-sapphire using the pulsed laser deposition (PLD) method. Znvacancy related defects in the films were studied by different positron annihilation spectroscopy (PAS). These included Doppler broadening spectroscopy (DBS) employing a continuous monenergetic positron beam, and positron lifetime spectroscopy using a pulsed monoenergetic positron beam attached to an electron linear accelerator. Two kinds of Znvacancy related defects namely a monovacancy and a divacancy were identified in the films. In as-grown undoped samples grown with relatively low oxygen pressure P(O2)≤1.3 Pa, monovacancy is the dominant Zn-vacancy related defect. Annealing these samples at 900 oC induced Zn out-diffusion into the substrate and converted the monovacancy to divacancy. For the undoped samples grown with high P(O2)=5 Pa irrespective of the annealing temperature and the as-grown degenerate Ga-doped sample (n=1020 cm-3), divacancy is the dominant Zn-vacancy related defect. The clustering of vacancy will be discussed.-
dc.languageeng-
dc.publisherS P I E - International Society for Optical Engineering. The Journal's web site is located at http://spie.org/x1848.xml?WT.svl=mddp2-
dc.relation.ispartofSPIE - International Society for Optical Engineering. Proceedings-
dc.rightsCopyright 2017 Society of Photo‑Optical Instrumentation Engineers (SPIE). One print or electronic copy may be made for personal use only. Systematic reproduction and distribution, duplication of any material in this publication for a fee or for commercial purposes, and modification of the contents of the publication are prohibited. This article is available online at https://doi.org/10.1117/12.2267186-
dc.titleZn-vacancy related defects in ZnO grown by pulsed laser deposition-
dc.typeConference_Paper-
dc.identifier.emailLing, FCC: ccling@hkucc.hku.hk-
dc.identifier.emailWang, ZL: zilan@hku.hk-
dc.identifier.authorityLing, FCC=rp00747-
dc.description.naturepublished_or_final_version-
dc.identifier.doi10.1117/12.2267186-
dc.identifier.hkuros273285-
dc.identifier.volume10105-
dc.identifier.spage101050F:1-
dc.identifier.epage101050F:9-
dc.identifier.isiWOS:000405598700007-
dc.publisher.placeUnited States-

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