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Article: Cesium Doped NiOx as an Efficient Hole Extraction Layer for Inverted Planar Perovskite Solar Cells

TitleCesium Doped NiOx as an Efficient Hole Extraction Layer for Inverted Planar Perovskite Solar Cells
Authors
Keywordscesium doping
nickel oxide
organometallic halide perovskite
solar cells
Issue Date2017
PublisherWiley - V C H Verlag GmbH & Co. KGaA. The Journal's web site is located at http://onlinelibrary.wiley.com/journal/10.1002/(ISSN)1614-6840
Citation
Advanced Energy Materials, 2017, v. 7 n. 19, p. article no. 1700722 How to Cite?
AbstractOrganic–inorganic hybrid perovskite solar cells have resulted in tremendous interest in developing next generation photovoltaics due to high record efficiency exceeding 22%. For inverted structure perovskite solar cells, the hole extraction layers play a significant role in achieving efficient and stable perovskite solar cell by modifying charge extraction, interfacial recombination losses, and band alignment. Here, cesium doped NiOx is selected as a hole extraction layer to study the impact of Cs dopant on the optoelectronic properties of NiOx and the photovoltaic performance. Cs doped NiOx films are prepared by a simple solution-based method. Both doped and undoped NiOx films are smooth and highly transparent, while the Cs doped NiOx exhibits better electron conductivity and higher work function. Therefore, Cs doping results in a significant improvement in the performance of NiOx-based inverted planar perovskite solar cells. The best efficiency of Cs doped NiOx devices is 19.35%, and those devices show high stability as well. The improved efficiency in devices with Cs:NiOx is attributed to a significant improvement in the hole extraction and better band alignment compared to undoped NiOx. This work reveals that Cs doped NiOx is very promising hole extraction material for high and stable inverted perovskite solar cells. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Persistent Identifierhttp://hdl.handle.net/10722/242181
ISSN
2017 Impact Factor: 21.875
2015 SCImago Journal Rankings: 6.411
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorChen, W-
dc.contributor.authorLiu, F-
dc.contributor.authorFeng, XY-
dc.contributor.authorDjurisic, A-
dc.contributor.authorChan, WK-
dc.contributor.authorHe, ZB-
dc.date.accessioned2017-07-24T01:36:26Z-
dc.date.available2017-07-24T01:36:26Z-
dc.date.issued2017-
dc.identifier.citationAdvanced Energy Materials, 2017, v. 7 n. 19, p. article no. 1700722-
dc.identifier.issn1614-6832-
dc.identifier.urihttp://hdl.handle.net/10722/242181-
dc.description.abstractOrganic–inorganic hybrid perovskite solar cells have resulted in tremendous interest in developing next generation photovoltaics due to high record efficiency exceeding 22%. For inverted structure perovskite solar cells, the hole extraction layers play a significant role in achieving efficient and stable perovskite solar cell by modifying charge extraction, interfacial recombination losses, and band alignment. Here, cesium doped NiOx is selected as a hole extraction layer to study the impact of Cs dopant on the optoelectronic properties of NiOx and the photovoltaic performance. Cs doped NiOx films are prepared by a simple solution-based method. Both doped and undoped NiOx films are smooth and highly transparent, while the Cs doped NiOx exhibits better electron conductivity and higher work function. Therefore, Cs doping results in a significant improvement in the performance of NiOx-based inverted planar perovskite solar cells. The best efficiency of Cs doped NiOx devices is 19.35%, and those devices show high stability as well. The improved efficiency in devices with Cs:NiOx is attributed to a significant improvement in the hole extraction and better band alignment compared to undoped NiOx. This work reveals that Cs doped NiOx is very promising hole extraction material for high and stable inverted perovskite solar cells. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim-
dc.languageeng-
dc.publisherWiley - V C H Verlag GmbH & Co. KGaA. The Journal's web site is located at http://onlinelibrary.wiley.com/journal/10.1002/(ISSN)1614-6840-
dc.relation.ispartofAdvanced Energy Materials-
dc.subjectcesium doping-
dc.subjectnickel oxide-
dc.subjectorganometallic halide perovskite-
dc.subjectsolar cells-
dc.titleCesium Doped NiOx as an Efficient Hole Extraction Layer for Inverted Planar Perovskite Solar Cells-
dc.typeArticle-
dc.identifier.emailChen, W: wchennj@hku.hk-
dc.identifier.emailLiu, F: liufz@hku.hk-
dc.identifier.emailDjurisic, A: dalek@hku.hk-
dc.identifier.emailChan, WK: waichan@hku.hk-
dc.identifier.authorityDjurisic, A=rp00690-
dc.identifier.authorityChan, WK=rp00667-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1002/aenm.201700722-
dc.identifier.scopuseid_2-s2.0-85020460047-
dc.identifier.hkuros273117-
dc.identifier.volume7-
dc.identifier.issue19-
dc.identifier.spagearticle no. 1700722-
dc.identifier.epagearticle no. 1700722-
dc.identifier.isiWOS:000414918700028-
dc.publisher.placeGermany-

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