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Conference Paper: Rectifying properties and colossal magnetoresistance in La0.9Hf0.1MnO3 /Nb-0.7 wt%-doped SrTiO3 heterojunction

TitleRectifying properties and colossal magnetoresistance in La0.9Hf0.1MnO3 /Nb-0.7 wt%-doped SrTiO3 heterojunction
Authors
Issue Date2013
PublisherSPIE - International Society for Optical Engineering.
Citation
The 8th International Conference on Thin Film Physics and Applications (TFPA2013), Shanghai, China, 20-23 September 2013. In Proceedings of SPIE, 2013, v. 9068, article no. 90681O, p. 1-6 How to Cite?
AbstractA heterojunction with good rectifying properties in a wide temperature range from 20 K to 300 K was fabricated simply by depositing an as-grown La0.9Hf0.1MnO3 (LHMO) film on a commercial 0.7 wt% Nb-doped SrTiO3 single crystal substrate using pulsed laser deposition technique. The current-voltage behavior of the LHMO/STON is measured under applied magnetic fields varying between 0 and 5 T. The heterojunction shows a remarkable magnetoresistance which depends on both the temperature and bias voltages. The sign of the magnetoresistance as function of temperature at either forward or reverse bias voltage is extensively studied by the filling of electrons in the eg and t2g band. The good rectifying behaviors, the magnetic tunable properties and the maximum magnetoresistance obtained at room temperature make this simple heterojunction promising for practical applications. © (2013) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal
DescriptionProceedings of SPIE v. 9068 entitled: Technology of Thin Film & Application of Thin Film
Persistent Identifierhttp://hdl.handle.net/10722/241026
ISSN
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorWang, L-
dc.contributor.authorWu, ZP-
dc.contributor.authorJiang, Y-
dc.contributor.authorRen, B-
dc.contributor.authorHuang, J-
dc.contributor.authorTang, K-
dc.contributor.authorZhang, WZ-
dc.contributor.authorGao, J-
dc.contributor.authorWang, LJ-
dc.contributor.authorChu, JH-
dc.contributor.authorWang, CR-
dc.date.accessioned2017-05-22T09:21:18Z-
dc.date.available2017-05-22T09:21:18Z-
dc.date.issued2013-
dc.identifier.citationThe 8th International Conference on Thin Film Physics and Applications (TFPA2013), Shanghai, China, 20-23 September 2013. In Proceedings of SPIE, 2013, v. 9068, article no. 90681O, p. 1-6-
dc.identifier.issn0277-786X-
dc.identifier.urihttp://hdl.handle.net/10722/241026-
dc.descriptionProceedings of SPIE v. 9068 entitled: Technology of Thin Film & Application of Thin Film-
dc.description.abstractA heterojunction with good rectifying properties in a wide temperature range from 20 K to 300 K was fabricated simply by depositing an as-grown La0.9Hf0.1MnO3 (LHMO) film on a commercial 0.7 wt% Nb-doped SrTiO3 single crystal substrate using pulsed laser deposition technique. The current-voltage behavior of the LHMO/STON is measured under applied magnetic fields varying between 0 and 5 T. The heterojunction shows a remarkable magnetoresistance which depends on both the temperature and bias voltages. The sign of the magnetoresistance as function of temperature at either forward or reverse bias voltage is extensively studied by the filling of electrons in the eg and t2g band. The good rectifying behaviors, the magnetic tunable properties and the maximum magnetoresistance obtained at room temperature make this simple heterojunction promising for practical applications. © (2013) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal-
dc.languageeng-
dc.publisherSPIE - International Society for Optical Engineering.-
dc.relation.ispartofProceedings of SPIE-
dc.rightsCopyright 2013 Society of Photo‑Optical Instrumentation Engineers (SPIE). One print or electronic copy may be made for personal use only. Systematic reproduction and distribution, duplication of any material in this publication for a fee or for commercial purposes, and modification of the contents of the publication are prohibited. This article is available online at https://doi.org/10.1117/12.2054009-
dc.titleRectifying properties and colossal magnetoresistance in La0.9Hf0.1MnO3 /Nb-0.7 wt%-doped SrTiO3 heterojunction-
dc.typeConference_Paper-
dc.identifier.emailGao, J: jugao@hku.hk-
dc.identifier.authorityGao, J=rp00699-
dc.description.naturepublished_or_final_version-
dc.identifier.doi10.1117/12.2054009-
dc.identifier.scopuseid_2-s2.0-84891586778-
dc.identifier.hkuros272098-
dc.identifier.volume9068-
dc.identifier.spagearticle no. 90681O, p. 1-
dc.identifier.epagearticle no. 90681O, p. 6-
dc.identifier.isiWOS:000329162500060-
dc.publisher.placeUnited States-
dc.customcontrol.immutablesml 170526-

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