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postgraduate thesis: A study on high-k dielectrics as charge-trapping material in flash memory device

TitleA study on high-k dielectrics as charge-trapping material in flash memory device
Authors
Shi, Runpu施润普
Issue Date2016
PublisherThe University of Hong Kong (Pokfulam, Hong Kong)
Citation
Shi, R. [施润普]. (2016). A study on high-k dielectrics as charge-trapping material in flash memory device. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR.
DegreeDoctor of Philosophy
SubjectDielectrics
Flash memories (Computers)
Dept/ProgramElectrical and Electronic Engineering
Persistent Identifierhttp://hdl.handle.net/10722/238855
HKU Library Item IDb5824332

 

DC FieldValueLanguage
dc.contributor.authorShi, Runpu-
dc.contributor.author施润普-
dc.date.accessioned2017-02-20T02:06:41Z-
dc.date.available2017-02-20T02:06:41Z-
dc.date.issued2016-
dc.identifier.citationShi, R. [施润普]. (2016). A study on high-k dielectrics as charge-trapping material in flash memory device. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR.-
dc.identifier.urihttp://hdl.handle.net/10722/238855-
dc.languageeng-
dc.publisherThe University of Hong Kong (Pokfulam, Hong Kong)-
dc.relation.ispartofHKU Theses Online (HKUTO)-
dc.rightsThe author retains all proprietary rights, (such as patent rights) and the right to use in future works.-
dc.rightsThis work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.-
dc.subject.lcshDielectrics-
dc.subject.lcshFlash memories (Computers)-
dc.titleA study on high-k dielectrics as charge-trapping material in flash memory device-
dc.typePG_Thesis-
dc.identifier.hkulb5824332-
dc.description.thesisnameDoctor of Philosophy-
dc.description.thesislevelDoctoral-
dc.description.thesisdisciplineElectrical and Electronic Engineering-
dc.description.naturepublished_or_final_version-
dc.identifier.mmsid991021208879703414-

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