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Article: Impact of edge states on device performance of phosphorene heterojunction tunneling field effect transistors
Title | Impact of edge states on device performance of phosphorene heterojunction tunneling field effect transistors |
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Authors | |
Issue Date | 2016 |
Publisher | RSC Publications. The Journal's web site is located at http://pubs.rsc.org/en/journals/journalissues/nr#!recentarticles&all |
Citation | Nanoscale, 2016, v. 8 n. 42, p. 18180-18186 How to Cite? |
Abstract | © 2016 The Royal Society of Chemistry.Black phosphorus (BP) tunneling field effect transistors (TFETs) using heterojunctions (Hes) are investigated by atomistic quantum transport simulations. It is observed that edge states have a great impact on the transport characteristics of BP He-TFETs, which results in the potential pinning effect and deterioration of gate control. However, the on-state current can be effectively enhanced by using hydrogen to saturate the edge dangling bonds in BP He-TFETs, by which means edge states are quenched. By extending layered BP with a smaller band gap to the channel region and modulating the BP thickness, the device performance of BP He-TFETs can be further optimized and can fulfil the requirements of the international technology road-map for semiconductors (ITRS) 2013 for low power applications. In 15 nm 3L-1L and 4L-1L BP He-TFETs along the armchair direction the on-state currents are over two times larger than the current required by ITRS 2013 and can reach above 103 μA μm-1 with the fixed off-state current of 10 pA μm-1. It is also found that the ambipolar effect can be effectively suppressed in BP He-TFETs. |
Persistent Identifier | http://hdl.handle.net/10722/236633 |
ISSN | 2021 Impact Factor: 8.307 2020 SCImago Journal Rankings: 2.038 |
ISI Accession Number ID |
DC Field | Value | Language |
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dc.contributor.author | Liu, F | - |
dc.contributor.author | Wang, J | - |
dc.contributor.author | Guo, H | - |
dc.date.accessioned | 2016-12-01T09:08:27Z | - |
dc.date.available | 2016-12-01T09:08:27Z | - |
dc.date.issued | 2016 | - |
dc.identifier.citation | Nanoscale, 2016, v. 8 n. 42, p. 18180-18186 | - |
dc.identifier.issn | 2040-3364 | - |
dc.identifier.uri | http://hdl.handle.net/10722/236633 | - |
dc.description.abstract | © 2016 The Royal Society of Chemistry.Black phosphorus (BP) tunneling field effect transistors (TFETs) using heterojunctions (Hes) are investigated by atomistic quantum transport simulations. It is observed that edge states have a great impact on the transport characteristics of BP He-TFETs, which results in the potential pinning effect and deterioration of gate control. However, the on-state current can be effectively enhanced by using hydrogen to saturate the edge dangling bonds in BP He-TFETs, by which means edge states are quenched. By extending layered BP with a smaller band gap to the channel region and modulating the BP thickness, the device performance of BP He-TFETs can be further optimized and can fulfil the requirements of the international technology road-map for semiconductors (ITRS) 2013 for low power applications. In 15 nm 3L-1L and 4L-1L BP He-TFETs along the armchair direction the on-state currents are over two times larger than the current required by ITRS 2013 and can reach above 103 μA μm-1 with the fixed off-state current of 10 pA μm-1. It is also found that the ambipolar effect can be effectively suppressed in BP He-TFETs. | - |
dc.language | eng | - |
dc.publisher | RSC Publications. The Journal's web site is located at http://pubs.rsc.org/en/journals/journalissues/nr#!recentarticles&all | - |
dc.relation.ispartof | Nanoscale | - |
dc.title | Impact of edge states on device performance of phosphorene heterojunction tunneling field effect transistors | - |
dc.type | Article | - |
dc.identifier.email | Liu, F: feiliu@hku.hk | - |
dc.identifier.email | Wang, J: jianwang@hku.hk | - |
dc.identifier.authority | Liu, F=rp02229 | - |
dc.identifier.authority | Wang, J=rp00799 | - |
dc.description.nature | postprint | - |
dc.identifier.doi | 10.1039/C6NR05734A | - |
dc.identifier.scopus | eid_2-s2.0-84994129776 | - |
dc.identifier.hkuros | 271189 | - |
dc.identifier.volume | 8 | - |
dc.identifier.issue | 42 | - |
dc.identifier.spage | 18180 | - |
dc.identifier.epage | 18186 | - |
dc.identifier.eissn | 2040-3372 | - |
dc.identifier.isi | WOS:000387427400021 | - |
dc.publisher.place | United Kingdom | - |
dc.identifier.issnl | 2040-3364 | - |