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Article: Improved Charge-Trapping Characteristics of ZrO2 by Al Doping for Nonvolatile Memory Applications

TitleImproved Charge-Trapping Characteristics of ZrO2 by Al Doping for Nonvolatile Memory Applications
Authors
HUANG, XSHI, RSin, JKOLai, PT
KeywordsAl-doped ZrO2 (ZrAlO)
charge-trapping layer
high-k dielectric
MANOS
Nonvolatile memory
Issue Date2016
Citation
IEEE Transactions on Device and Materials Reliability, 2016, v. 16, p. 38-42 How to Cite?
DOI: http://dx.doi.org/10.1109/TDMR.2015.2508153
Persistent Identifierhttp://hdl.handle.net/10722/234055
ISSN
1530-4388
2021 Impact Factor: 1.886
2020 SCImago Journal Rankings: 0.384
ISI Accession Number ID
WOS:000372544700006

 

DC FieldValueLanguage
dc.contributor.authorHUANG, X-
dc.contributor.authorSHI, R-
dc.contributor.authorSin, JKO-
dc.contributor.authorLai, PT-
dc.date.accessioned2016-10-14T06:58:46Z-
dc.date.available2016-10-14T06:58:46Z-
dc.date.issued2016-
dc.identifier.citationIEEE Transactions on Device and Materials Reliability, 2016, v. 16, p. 38-42-
dc.identifier.issn1530-4388-
dc.identifier.urihttp://hdl.handle.net/10722/234055-
dc.languageeng-
dc.relation.ispartofIEEE Transactions on Device and Materials Reliability-
dc.subjectAl-doped ZrO2 (ZrAlO)-
dc.subjectcharge-trapping layer-
dc.subjecthigh-k dielectric-
dc.subjectMANOS-
dc.subjectNonvolatile memory-
dc.titleImproved Charge-Trapping Characteristics of ZrO2 by Al Doping for Nonvolatile Memory Applications -
dc.typeArticle-
dc.identifier.emailLai, PT: laip@eee.hku.hk-
dc.identifier.authorityLai, PT=rp00130-
dc.identifier.doi10.1109/TDMR.2015.2508153-
dc.identifier.scopuseid_2-s2.0-84963894690-
dc.identifier.hkuros267831-
dc.identifier.volume16-
dc.identifier.spage38-
dc.identifier.epage42-
dc.identifier.eissn1558-2574-
dc.identifier.isiWOS:000372544700006-
dc.identifier.issnl1530-4388-

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