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Article: Improved Charge-Trapping Characteristics of ZrO2 by Al Doping for Nonvolatile Memory Applications

TitleImproved Charge-Trapping Characteristics of ZrO2 by Al Doping for Nonvolatile Memory Applications
Authors
Issue Date2016
Citation
IEEE Transactions on Device and Materials Reliability, 2016, v. 16, p. 38-42 How to Cite?
Persistent Identifierhttp://hdl.handle.net/10722/234055

 

DC FieldValueLanguage
dc.contributor.authorHUANG, X-
dc.contributor.authorSHI, R-
dc.contributor.authorSin, JKO-
dc.contributor.authorLai, PT-
dc.date.accessioned2016-10-14T06:58:46Z-
dc.date.available2016-10-14T06:58:46Z-
dc.date.issued2016-
dc.identifier.citationIEEE Transactions on Device and Materials Reliability, 2016, v. 16, p. 38-42-
dc.identifier.urihttp://hdl.handle.net/10722/234055-
dc.languageeng-
dc.relation.ispartofIEEE Transactions on Device and Materials Reliability-
dc.titleImproved Charge-Trapping Characteristics of ZrO2 by Al Doping for Nonvolatile Memory Applications -
dc.typeArticle-
dc.identifier.emailLai, PT: laip@eee.hku.hk-
dc.identifier.authorityLai, PT=rp00130-
dc.identifier.doi10.1109/TDMR.2015.2508153-
dc.identifier.hkuros267831-
dc.identifier.volume16-
dc.identifier.spage38-
dc.identifier.epage42-

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