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Conference Paper: A numerical investigation on effects of lateral Si/SiO2 interface traps on magnetic sensitivity of sectorial SD-MAGFET

TitleA numerical investigation on effects of lateral Si/SiO2 interface traps on magnetic sensitivity of sectorial SD-MAGFET
Authors
KeywordsInterface traps
Magnetic sensitivity
Sectorial SD-MAGFETs
Si/SiO2 interface
Issue Date2016
PublisherIEEE.
Citation
The 5th International Symposium on Next-Generation Electronics (ISNE 2016), Hsinchu, Taiwan, 4-6 May 2016. In Conference Proceedings, 2016 How to Cite?
AbstractThis work studies the influence of the Si/SiO2 interface traps at the sidewall of sectorial SD-MAGFET in detail. Ionized acceptor traps work like negative oxide charges to enhance the magnetic sensing of the device by depleting the conduction channel, but ionized donor traps behave like positive oxide charges to weaken the magnetic sensing by inducing a parasitic channel at the sidewall. In particular, the higher the density of the acceptor or donor traps, the stronger is the effect on the magnetic sensitivity. Moreover, the trap energy also affects the sensitivity, with larger effect for traps lying closer to the valence or conduction band. © 2016 IEEE.
DescriptionSession WIP: paper no. W1P-4-18
Persistent Identifierhttp://hdl.handle.net/10722/232323
ISBN

 

DC FieldValueLanguage
dc.contributor.authorYang, Z-
dc.contributor.authorLeung, CW-
dc.contributor.authorLai, PT-
dc.contributor.authorPong, PWT-
dc.date.accessioned2016-09-20T05:29:13Z-
dc.date.available2016-09-20T05:29:13Z-
dc.date.issued2016-
dc.identifier.citationThe 5th International Symposium on Next-Generation Electronics (ISNE 2016), Hsinchu, Taiwan, 4-6 May 2016. In Conference Proceedings, 2016-
dc.identifier.isbn978-150902439-1-
dc.identifier.urihttp://hdl.handle.net/10722/232323-
dc.descriptionSession WIP: paper no. W1P-4-18-
dc.description.abstractThis work studies the influence of the Si/SiO2 interface traps at the sidewall of sectorial SD-MAGFET in detail. Ionized acceptor traps work like negative oxide charges to enhance the magnetic sensing of the device by depleting the conduction channel, but ionized donor traps behave like positive oxide charges to weaken the magnetic sensing by inducing a parasitic channel at the sidewall. In particular, the higher the density of the acceptor or donor traps, the stronger is the effect on the magnetic sensitivity. Moreover, the trap energy also affects the sensitivity, with larger effect for traps lying closer to the valence or conduction band. © 2016 IEEE.-
dc.languageeng-
dc.publisherIEEE.-
dc.relation.ispartofInternational Symposium on Next-Generation Electronics Proceedings-
dc.rightsInternational Symposium on Next-Generation Electronics Proceedings. Copyright © IEEE.-
dc.rights©2016 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.-
dc.subjectInterface traps-
dc.subjectMagnetic sensitivity-
dc.subjectSectorial SD-MAGFETs-
dc.subjectSi/SiO2 interface-
dc.titleA numerical investigation on effects of lateral Si/SiO2 interface traps on magnetic sensitivity of sectorial SD-MAGFET-
dc.typeConference_Paper-
dc.identifier.emailLai, PT: laip@eee.hku.hk-
dc.identifier.emailPong, PWT: ppong@hkucc.hku.hk-
dc.identifier.authorityLai, PT=rp00130-
dc.identifier.authorityPong, PWT=rp00217-
dc.description.natureLink_to_subscribed_fulltext-
dc.identifier.doi10.1109/ISNE.2016.7543340-
dc.identifier.scopuseid_2-s2.0-84985993382-
dc.identifier.hkuros265583-
dc.publisher.placeUnited States-
dc.customcontrol.immutablesml 160927-

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