File Download

There are no files associated with this item.

Supplementary

Conference Paper: Tuning the recombination rate of InGaN/GaN nanopillars with voltage-induced space charge regions

TitleTuning the recombination rate of InGaN/GaN nanopillars with voltage-induced space charge regions
Authors
Feng, CHuang, JChoi, HW
Issue Date2015
Citation
The 11th International Conference on Nitride Semiconductors (ICNS-11), Beijing, China, 30 August-4 September 2015. How to Cite?
DescriptionWeOP157
Persistent Identifierhttp://hdl.handle.net/10722/232278

 

DC FieldValueLanguage
dc.contributor.authorFeng, C-
dc.contributor.authorHuang, J-
dc.contributor.authorChoi, HW-
dc.date.accessioned2016-09-20T05:28:55Z-
dc.date.available2016-09-20T05:28:55Z-
dc.date.issued2015-
dc.identifier.citationThe 11th International Conference on Nitride Semiconductors (ICNS-11), Beijing, China, 30 August-4 September 2015.-
dc.identifier.urihttp://hdl.handle.net/10722/232278-
dc.descriptionWeOP157-
dc.languageeng-
dc.relation.ispartofInternational Conference on Nitride Semiconductors, ICNS-11-
dc.titleTuning the recombination rate of InGaN/GaN nanopillars with voltage-induced space charge regions-
dc.typeConference_Paper-
dc.identifier.emailHuang, J: jahuang@HKUCC-COM.hku.hk-
dc.identifier.emailChoi, HW: hwchoi@hku.hk-
dc.identifier.authorityChoi, HW=rp00108-
dc.identifier.hkuros263495-

Export via OAI-PMH Interface in XML Formats

OR

Export to Other Non-XML Formats