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Article: Atomic level simulation of permittivity of oxidized ultra-thin Si channels

TitleAtomic level simulation of permittivity of oxidized ultra-thin Si channels
Authors
KeywordsSilicon
Permittivity
Films
Dielectric constant
Degradation
Issue Date2015
PublisherInstitute of Electrical and Electronics Engineers. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/conhome.jsp?punumber=1000675
Citation
Proceedings of International Conference on Simulation of Semiconductor Processes and Devices, 2015, p. 40-43 How to Cite?
AbstractWe use density-functional-based tight binding theory, coupled to a Poisson solver to investigate the dielectric response in oxidized ultra-thin Si films with thickness in the range of 0.8 to 10.0 nm. Building on our recent work on the electronic structure of such Si films using the same formalism, we demonstrate that the electronic contribution to the permittivity of Si and of SiO2 is modeled with good accuracy. The simulations of oxidized Si films agree well with available experimental data and show appreciable degradation of permittivity by nearly 18% at 0.8nm. Notable is however that simulations with hydrogenated Si substantially overestimate the degradation of permittivity. Beyond clarifying the quantitative trend of permittivity versus Si thickness, which is very relevant e.g. for fully-depleted Si-on-insulator MOSFETs, the present work is a cornerstone towards delivering an atomistic modelling approach that is free of material- or device-related phenomenological parameters.
DescriptionThe 2015 The International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Washington DC., 9-11 September 2015
Persistent Identifierhttp://hdl.handle.net/10722/231641
ISBN
ISSN

 

DC FieldValueLanguage
dc.contributor.authorMarkov, SN-
dc.contributor.authorKWOK, YH-
dc.contributor.authorChen, G-
dc.contributor.authorPenazzi, G-
dc.contributor.authorAradi, B-
dc.contributor.authorFrauenheim, T-
dc.contributor.authorPecchia, A-
dc.date.accessioned2016-09-20T05:24:34Z-
dc.date.available2016-09-20T05:24:34Z-
dc.date.issued2015-
dc.identifier.citationProceedings of International Conference on Simulation of Semiconductor Processes and Devices, 2015, p. 40-43-
dc.identifier.isbn9781467378604-
dc.identifier.issn1946-1569-
dc.identifier.urihttp://hdl.handle.net/10722/231641-
dc.descriptionThe 2015 The International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Washington DC., 9-11 September 2015-
dc.description.abstractWe use density-functional-based tight binding theory, coupled to a Poisson solver to investigate the dielectric response in oxidized ultra-thin Si films with thickness in the range of 0.8 to 10.0 nm. Building on our recent work on the electronic structure of such Si films using the same formalism, we demonstrate that the electronic contribution to the permittivity of Si and of SiO2 is modeled with good accuracy. The simulations of oxidized Si films agree well with available experimental data and show appreciable degradation of permittivity by nearly 18% at 0.8nm. Notable is however that simulations with hydrogenated Si substantially overestimate the degradation of permittivity. Beyond clarifying the quantitative trend of permittivity versus Si thickness, which is very relevant e.g. for fully-depleted Si-on-insulator MOSFETs, the present work is a cornerstone towards delivering an atomistic modelling approach that is free of material- or device-related phenomenological parameters.-
dc.languageeng-
dc.publisherInstitute of Electrical and Electronics Engineers. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/conhome.jsp?punumber=1000675-
dc.relation.ispartofProceedings of International Conference on Simulation of Semiconductor Processes and Devices-
dc.rightsProceedings of International Conference on Simulation of Semiconductor Processes and Devices. Copyright © Institute of Electrical and Electronics Engineers.-
dc.rights©20xx IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.-
dc.subjectSilicon-
dc.subjectPermittivity-
dc.subjectFilms-
dc.subjectDielectric constant-
dc.subjectDegradation-
dc.titleAtomic level simulation of permittivity of oxidized ultra-thin Si channels-
dc.typeArticle-
dc.identifier.emailMarkov, SN: figaro@hku.hk-
dc.identifier.emailChen, G: ghchen@hku.hk-
dc.identifier.authorityMarkov, SN=rp02107-
dc.identifier.authorityChen, G=rp00671-
dc.identifier.doi10.1109/SISPAD.2015.7292253-
dc.identifier.hkuros263575-
dc.identifier.spage40-
dc.identifier.epage43-
dc.publisher.placeUnited States-

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