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Article: Band-edge optical transitions in a nonpolar-plane GaN substrate: exciton–phonon coupling and temperature effects

TitleBand-edge optical transitions in a nonpolar-plane GaN substrate: exciton–phonon coupling and temperature effects
Authors
Issue Date2016
PublisherInstitute of Physics Publishing. The Journal's web site is located at http://www.iop.org/journals/sst
Citation
Semiconductor Science and Technology, 2016, v. 31 n. 9, p. article no. 095004 How to Cite?
Persistent Identifierhttp://hdl.handle.net/10722/231230
ISSN
2015 Impact Factor: 2.098
2015 SCImago Journal Rankings: 0.676

 

DC FieldValueLanguage
dc.contributor.authorWANG, M-
dc.contributor.authorXu, S-
dc.date.accessioned2016-09-20T05:21:36Z-
dc.date.available2016-09-20T05:21:36Z-
dc.date.issued2016-
dc.identifier.citationSemiconductor Science and Technology, 2016, v. 31 n. 9, p. article no. 095004-
dc.identifier.issn0268-1242-
dc.identifier.urihttp://hdl.handle.net/10722/231230-
dc.languageeng-
dc.publisherInstitute of Physics Publishing. The Journal's web site is located at http://www.iop.org/journals/sst-
dc.relation.ispartofSemiconductor Science and Technology-
dc.rightsSemiconductor Science and Technology. Copyright © Institute of Physics Publishing.-
dc.rightsThis is an author-created, un-copyedited version of an article published in [insert name of journal]. IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at http://dx.doi.org/[insert DOI].-
dc.titleBand-edge optical transitions in a nonpolar-plane GaN substrate: exciton–phonon coupling and temperature effects-
dc.typeArticle-
dc.identifier.emailXu, S: sjxu@hku.hk-
dc.identifier.authorityXu, S=rp00821-
dc.identifier.doi10.1088/0268-1242/31/9/095004-
dc.identifier.hkuros263745-
dc.identifier.volume31-
dc.identifier.issue9-
dc.identifier.spagearticle no. 095004-
dc.identifier.epagearticle no. 095004-
dc.publisher.placeUnited Kingdom-

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