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Book Chapter: Valley-spin physics in 2D semiconducting transition metal dichalcogenides

TitleValley-spin physics in 2D semiconducting transition metal dichalcogenides
Authors
Issue Date2017
PublisherCambridge University Press.
Citation
Valley-spin physics in 2D semiconducting transition metal dichalcogenides. In Avouris, P, Heinz, TF and Low, T (Eds.), 2D Materials: Properties and Devices, p. 259-278. Cambridge University Press, 2017 How to Cite?
Persistent Identifierhttp://hdl.handle.net/10722/230384
ISBN

 

DC FieldValueLanguage
dc.contributor.authorYu, H-
dc.contributor.authorYao, W-
dc.date.accessioned2016-08-23T14:16:44Z-
dc.date.available2016-08-23T14:16:44Z-
dc.date.issued2017-
dc.identifier.citationValley-spin physics in 2D semiconducting transition metal dichalcogenides. In Avouris, P, Heinz, TF and Low, T (Eds.), 2D Materials: Properties and Devices, p. 259-278. Cambridge University Press, 2017-
dc.identifier.isbn9781107163713-
dc.identifier.urihttp://hdl.handle.net/10722/230384-
dc.languageeng-
dc.publisherCambridge University Press.-
dc.relation.ispartof2D Materials: Properties and Devices-
dc.titleValley-spin physics in 2D semiconducting transition metal dichalcogenides-
dc.typeBook_Chapter-
dc.identifier.emailYu, H: yuhongyi@hku.hk-
dc.identifier.emailYao, W: wangyao@hku.hk-
dc.identifier.authorityYu, H=rp02112-
dc.identifier.authorityYao, W=rp00827-
dc.identifier.doi10.1017/9781316681619.016-
dc.identifier.hkuros262428-
dc.identifier.spage259-
dc.identifier.epage278-

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