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Article: Interfacial Characterizations of a Nickel-Phosphorus Layer Electrolessly Deposited on a Silane Compound-Modified Silicon Wafer Under Thermal Annealing

TitleInterfacial Characterizations of a Nickel-Phosphorus Layer Electrolessly Deposited on a Silane Compound-Modified Silicon Wafer Under Thermal Annealing
Authors
Issue Date2016
Citation
Journal of Electronic Materials, 2016 How to Cite?
Persistent Identifierhttp://hdl.handle.net/10722/227334

 

DC FieldValueLanguage
dc.contributor.authorLAI, KC-
dc.contributor.authorWU, PY-
dc.contributor.authorCHEN, CM-
dc.contributor.authorWEI, TC-
dc.contributor.authorWU, CH-
dc.contributor.authorFeng, SPT-
dc.date.accessioned2016-07-18T09:09:51Z-
dc.date.available2016-07-18T09:09:51Z-
dc.date.issued2016-
dc.identifier.citationJournal of Electronic Materials, 2016-
dc.identifier.urihttp://hdl.handle.net/10722/227334-
dc.languageeng-
dc.relation.ispartofJournal of Electronic Materials-
dc.titleInterfacial Characterizations of a Nickel-Phosphorus Layer Electrolessly Deposited on a Silane Compound-Modified Silicon Wafer Under Thermal Annealing-
dc.typeArticle-
dc.identifier.emailFeng, SPT: hpfeng@hku.hk-
dc.identifier.authorityFeng, SPT=rp01533-
dc.identifier.doi10.1007/s11664-016-4708-x-
dc.identifier.hkuros258966-

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