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Article: Enhanced electron injection efficiency and electroluminescence in organic light-emitting diodes by using an Sn/Al cathode

TitleEnhanced electron injection efficiency and electroluminescence in organic light-emitting diodes by using an Sn/Al cathode
Authors
Issue Date2002
Citation
Chinese Physics Letters, 2002, v. 19, n. 10, p. 1534-1536 How to Cite?
AbstractA series of organic light-emitting diodes (OLEDs) have been fabricated with different thicknesses of the tin (Sn) layer. The structure of the devices is indium-tin oxide (ITO)/copper phthalocyanine (CuPc) (12nm)/N, N′-diphenyl-N, N′-bis(1-naphthyl)-(1,1′biphenyl)-4, 4′-diamine (NPB) (60nm)/tris-(8-hydroxyquinoline)aluminum (Alq3) (60nm)/Sn/aluminium (Al (120nm). It is found that compared to OLEDs with only an Al cathode, both the electron injection efficiency and electroluminescence are improved when the thickness of the Sn layer is properly chosen. The maximum efficiency and brightness of the devices with Sn (2.1 nm) Al and Al cathode are 0.54 lm/W and 9800cd/m2, and 0.26 lm/W and 3000cd/m2, respectively. One possible explanation to this phenomenon is that the enhancement of the electron density of the Sn layer due to the electron transfer from the Al to the Sn layer leads to the improvement of the electron injection efficiency and electroluminescence.
Persistent Identifierhttp://hdl.handle.net/10722/225840
ISSN
2015 Impact Factor: 0.875
2015 SCImago Journal Rankings: 0.278

 

DC FieldValueLanguage
dc.contributor.authorLi, Feng-
dc.contributor.authorCheng, Gang-
dc.contributor.authorFeng, Jing-
dc.contributor.authorLiu, Shi Yong-
dc.date.accessioned2016-05-23T02:21:52Z-
dc.date.available2016-05-23T02:21:52Z-
dc.date.issued2002-
dc.identifier.citationChinese Physics Letters, 2002, v. 19, n. 10, p. 1534-1536-
dc.identifier.issn0256-307X-
dc.identifier.urihttp://hdl.handle.net/10722/225840-
dc.description.abstractA series of organic light-emitting diodes (OLEDs) have been fabricated with different thicknesses of the tin (Sn) layer. The structure of the devices is indium-tin oxide (ITO)/copper phthalocyanine (CuPc) (12nm)/N, N′-diphenyl-N, N′-bis(1-naphthyl)-(1,1′biphenyl)-4, 4′-diamine (NPB) (60nm)/tris-(8-hydroxyquinoline)aluminum (Alq3) (60nm)/Sn/aluminium (Al (120nm). It is found that compared to OLEDs with only an Al cathode, both the electron injection efficiency and electroluminescence are improved when the thickness of the Sn layer is properly chosen. The maximum efficiency and brightness of the devices with Sn (2.1 nm) Al and Al cathode are 0.54 lm/W and 9800cd/m2, and 0.26 lm/W and 3000cd/m2, respectively. One possible explanation to this phenomenon is that the enhancement of the electron density of the Sn layer due to the electron transfer from the Al to the Sn layer leads to the improvement of the electron injection efficiency and electroluminescence.-
dc.languageeng-
dc.relation.ispartofChinese Physics Letters-
dc.titleEnhanced electron injection efficiency and electroluminescence in organic light-emitting diodes by using an Sn/Al cathode-
dc.typeArticle-
dc.description.natureLink_to_subscribed_fulltext-
dc.identifier.doi10.1088/0256-307X/19/10/341-
dc.identifier.scopuseid_2-s2.0-0036799906-
dc.identifier.volume19-
dc.identifier.issue10-
dc.identifier.spage1534-
dc.identifier.epage1536-

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