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Article: Photocarrier injection and photo-resistance in SrTiO3−δ/GaAs p-n junctions

TitlePhotocarrier injection and photo-resistance in SrTiO3−δ/GaAs p-n junctions
Authors
Issue Date2012
PublisherInstitute of Physics Publishing Ltd. The Journal's web site is located at http://iopscience.iop.org/0295-5075
Citation
EPL (Europhysics Letters), 2012, v. 100 n. 5, p. 57003:1-4 How to Cite?
AbstractHeterojunctions composed of n-type oxygen-deficient SrTiO3−δ and p-type GaAs were fabricated using pulsed laser deposition method. The good crystallinity of SrTiO3−δ was confirmed by X-ray diffraction, reflection high-energy electron diffraction, and transmission electron microscopy. These heterojunctions exhibited excellent rectifying behavior from 40 K to room temperature. The photocarrier injection effect and a large photo-resistance were observed in a wide temperature range. The photo-resistance is nearly 100% at low temperatures and ~40% at room temperature under −0.5 V bias. Strong dependences on both temperature and bias voltage were found as well, which might be understood by considering the band structure of the formed p-n junction.
Persistent Identifierhttp://hdl.handle.net/10722/225569
ISSN
2015 Impact Factor: 1.963
2015 SCImago Journal Rankings: 0.565

 

DC FieldValueLanguage
dc.contributor.authorWu, ZP-
dc.contributor.authorGao, J-
dc.date.accessioned2016-05-20T02:02:10Z-
dc.date.available2016-05-20T02:02:10Z-
dc.date.issued2012-
dc.identifier.citationEPL (Europhysics Letters), 2012, v. 100 n. 5, p. 57003:1-4-
dc.identifier.issn0295-5075-
dc.identifier.urihttp://hdl.handle.net/10722/225569-
dc.description.abstractHeterojunctions composed of n-type oxygen-deficient SrTiO3−δ and p-type GaAs were fabricated using pulsed laser deposition method. The good crystallinity of SrTiO3−δ was confirmed by X-ray diffraction, reflection high-energy electron diffraction, and transmission electron microscopy. These heterojunctions exhibited excellent rectifying behavior from 40 K to room temperature. The photocarrier injection effect and a large photo-resistance were observed in a wide temperature range. The photo-resistance is nearly 100% at low temperatures and ~40% at room temperature under −0.5 V bias. Strong dependences on both temperature and bias voltage were found as well, which might be understood by considering the band structure of the formed p-n junction.-
dc.languageeng-
dc.publisherInstitute of Physics Publishing Ltd. The Journal's web site is located at http://iopscience.iop.org/0295-5075-
dc.relation.ispartofEPL (Europhysics Letters)-
dc.rightsEPL (Europhysics Letters). Copyright © Institute of Physics Publishing Ltd.-
dc.titlePhotocarrier injection and photo-resistance in SrTiO3−δ/GaAs p-n junctions-
dc.typeArticle-
dc.identifier.emailGao, J: jugao@hku.hk-
dc.identifier.authorityGao, J=rp00699-
dc.identifier.doi10.1209/0295-5075/100/57003-
dc.identifier.hkuros213488-
dc.identifier.volume100-
dc.identifier.issue5-
dc.identifier.spage57003:1-
dc.identifier.epage57003:4-
dc.publisher.placeUnited Kingdom-

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