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Article: Atomistic Simulations of Device Physics in Monolayer Transition Metal Dichalcogenide Tunneling Transistors

TitleAtomistic Simulations of Device Physics in Monolayer Transition Metal Dichalcogenide Tunneling Transistors
Authors
KeywordsBallistic transport
Negative differential resistance (NDR)
Transition metal dichalcogenide (TMDC)
Tunneling FETs (TFETs)
Issue Date2016
PublisherIEEE. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=16
Citation
IEEE Transactions on Electron Devices, 2016, v. 63 n. 1, p. 311-317 How to Cite?
Abstract© 2015 IEEE.Ballistic transport characteristics of transition metal dichalcogenide (TMDC) tunneling FETs (TFETs) are investigated by atomistic simulations using nonequilibrium Green's function. It is revealed that TMDC TFETs have crystal orientation-dependent transport properties: larger current but smaller utmost limit of ION/IOFF ratio in the zigzag direction (ZD) than in the armchair direction (AD). The orientation-dependent transport is related to the atomistic arrangement in the transport direction and subband properties. A giant negative differential resistance can be obtained in the AD due to the transport valley in the conduction band (CB), while it does not exist in the ZD. Device performance is optimized by tuning doping density and dielectric oxide thickness. Higher source/drain doping concentration can enhance the current at all studied gate voltages but reduce the ION/IOFF ratio, while thinner dielectric oxide thickness can increase saturation current and decrease minimum current at the same time. We also studied the scaling behavior of TMDC TFETs and found that the OFF-state current difference between the two directions gets larger with the gate length. At last, ION as a function of ION/IOFF ratio of six kinds of monolayer M X2 (M = Mo and W; X = S, Se, and Te) TFETs are compared. The largest ON-state current is obtained in WTe2 TFETs at the same ION/IOFF ratio.
Persistent Identifierhttp://hdl.handle.net/10722/223874
ISSN
2015 Impact Factor: 2.207
2015 SCImago Journal Rankings: 1.436

 

DC FieldValueLanguage
dc.contributor.authorLiu, F-
dc.contributor.authorWang, J-
dc.contributor.authorGuo, H-
dc.date.accessioned2016-03-18T02:30:15Z-
dc.date.available2016-03-18T02:30:15Z-
dc.date.issued2016-
dc.identifier.citationIEEE Transactions on Electron Devices, 2016, v. 63 n. 1, p. 311-317-
dc.identifier.issn0018-9383-
dc.identifier.urihttp://hdl.handle.net/10722/223874-
dc.description.abstract© 2015 IEEE.Ballistic transport characteristics of transition metal dichalcogenide (TMDC) tunneling FETs (TFETs) are investigated by atomistic simulations using nonequilibrium Green's function. It is revealed that TMDC TFETs have crystal orientation-dependent transport properties: larger current but smaller utmost limit of ION/IOFF ratio in the zigzag direction (ZD) than in the armchair direction (AD). The orientation-dependent transport is related to the atomistic arrangement in the transport direction and subband properties. A giant negative differential resistance can be obtained in the AD due to the transport valley in the conduction band (CB), while it does not exist in the ZD. Device performance is optimized by tuning doping density and dielectric oxide thickness. Higher source/drain doping concentration can enhance the current at all studied gate voltages but reduce the ION/IOFF ratio, while thinner dielectric oxide thickness can increase saturation current and decrease minimum current at the same time. We also studied the scaling behavior of TMDC TFETs and found that the OFF-state current difference between the two directions gets larger with the gate length. At last, ION as a function of ION/IOFF ratio of six kinds of monolayer M X2 (M = Mo and W; X = S, Se, and Te) TFETs are compared. The largest ON-state current is obtained in WTe2 TFETs at the same ION/IOFF ratio.-
dc.languageeng-
dc.publisherIEEE. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=16-
dc.relation.ispartofIEEE Transactions on Electron Devices-
dc.rightsIEEE Transactions on Electron Devices. Copyright © IEEE.-
dc.rights©20xx IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.-
dc.subjectBallistic transport-
dc.subjectNegative differential resistance (NDR)-
dc.subjectTransition metal dichalcogenide (TMDC)-
dc.subjectTunneling FETs (TFETs)-
dc.titleAtomistic Simulations of Device Physics in Monolayer Transition Metal Dichalcogenide Tunneling Transistors-
dc.typeArticle-
dc.identifier.emailLiu, F: feiliu@hku.hk-
dc.identifier.emailWang, J: jianwang@hku.hk-
dc.identifier.emailGuo, H: guohku@hku.hk-
dc.identifier.authorityWang, J=rp00799-
dc.identifier.doi10.1109/TED.2015.2497082-
dc.identifier.scopuseid_2-s2.0-84959567067-
dc.identifier.hkuros257197-
dc.identifier.volume63-
dc.identifier.issue1-
dc.identifier.spage311-
dc.identifier.epage317-

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