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Article: Device performance simulations of multilayer black phosphorus tunneling transistors

TitleDevice performance simulations of multilayer black phosphorus tunneling transistors
Authors
Issue Date2015
PublisherAIP Publishing. The Journal's web site is located at http://apl.aip.org/
Citation
Applied Physics Letters, 2015, v. 107 n. 20, p. 203501 How to Cite?
Abstract© 2015 AIP Publishing LLC.We report a theoretical investigation of ballistic transport in multilayer black phosphorus (BP) tunneling transistors (TFETs) with HfO2 as the gate oxide. First-principles calculations show that monolayer BP can be preserved well on HfO2 (111) surface. For a better device performance, the optimum layer and transport direction at different channel lengths are investigated. It is shown that BP TFETs have larger drain current in the armchair direction (AD) than in the zigzag direction, and the current difference can be several orders of magnitude. On-state current can be enhanced in the BP TFETs using thicker BP film, while the minimal leakage current is increased at the same time. To reduce the leakage current and subthreshold swing in the multilayer BP TFETs, lower source/drain doping concentration and smaller drain voltage should be applied. Compared to monolayer MoS2, MoSe2, and MoTe2 TFETs monolayer BP TFETs in AD can reach larger on-state current at the same Ion/Ioff ratio.
Persistent Identifierhttp://hdl.handle.net/10722/222484
ISSN
2015 Impact Factor: 3.142
2015 SCImago Journal Rankings: 1.105

 

DC FieldValueLanguage
dc.contributor.authorLiu, F-
dc.contributor.authorShi, Q-
dc.contributor.authorWang, J-
dc.contributor.authorGuo, H-
dc.date.accessioned2016-01-18T07:41:11Z-
dc.date.available2016-01-18T07:41:11Z-
dc.date.issued2015-
dc.identifier.citationApplied Physics Letters, 2015, v. 107 n. 20, p. 203501-
dc.identifier.issn0003-6951-
dc.identifier.urihttp://hdl.handle.net/10722/222484-
dc.description.abstract© 2015 AIP Publishing LLC.We report a theoretical investigation of ballistic transport in multilayer black phosphorus (BP) tunneling transistors (TFETs) with HfO2 as the gate oxide. First-principles calculations show that monolayer BP can be preserved well on HfO2 (111) surface. For a better device performance, the optimum layer and transport direction at different channel lengths are investigated. It is shown that BP TFETs have larger drain current in the armchair direction (AD) than in the zigzag direction, and the current difference can be several orders of magnitude. On-state current can be enhanced in the BP TFETs using thicker BP film, while the minimal leakage current is increased at the same time. To reduce the leakage current and subthreshold swing in the multilayer BP TFETs, lower source/drain doping concentration and smaller drain voltage should be applied. Compared to monolayer MoS2, MoSe2, and MoTe2 TFETs monolayer BP TFETs in AD can reach larger on-state current at the same Ion/Ioff ratio.-
dc.languageeng-
dc.publisherAIP Publishing. The Journal's web site is located at http://apl.aip.org/-
dc.relation.ispartofApplied Physics Letters-
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.titleDevice performance simulations of multilayer black phosphorus tunneling transistors-
dc.typeArticle-
dc.identifier.emailLiu, F: feiliu@hku.hk-
dc.identifier.emailWang, J: jianwang@hku.hk-
dc.identifier.authorityWang, J=rp00799-
dc.description.naturepublished_or_final_version-
dc.identifier.doi10.1063/1.4935752-
dc.identifier.scopuseid_2-s2.0-84948428946-
dc.identifier.hkuros256677-
dc.identifier.volume107-
dc.identifier.issue20-
dc.identifier.spage203501-
dc.identifier.epage203501-

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