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Article: Strain in epitaxial Bi2Se3 grown on GaN and graphene substrates: A reflection high-energy electron diffraction study

TitleStrain in epitaxial Bi2Se3 grown on GaN and graphene substrates: A reflection high-energy electron diffraction study
Authors
Issue Date2015
PublisherAIP Publishing LLC. The Journal's web site is located at http://apl.aip.org/
Citation
Applied Physics Letters, 2015, v. 107 n. 8, article no. 081604 How to Cite?
Persistent Identifierhttp://hdl.handle.net/10722/218819

 

DC FieldValueLanguage
dc.contributor.authorLI, B-
dc.contributor.authorGUO, X-
dc.contributor.authorHo, WK-
dc.contributor.authorXie, MH-
dc.date.accessioned2015-09-18T06:54:14Z-
dc.date.available2015-09-18T06:54:14Z-
dc.date.issued2015-
dc.identifier.citationApplied Physics Letters, 2015, v. 107 n. 8, article no. 081604-
dc.identifier.urihttp://hdl.handle.net/10722/218819-
dc.languageeng-
dc.publisherAIP Publishing LLC. The Journal's web site is located at http://apl.aip.org/-
dc.relation.ispartofApplied Physics Letters-
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.rightsCopyright (2015) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in (Applied Physics Letters, 2015, v. 107 n. 8, article no. 081604) and may be found at (http://dx.doi.org/10.1063/1.4929697).-
dc.titleStrain in epitaxial Bi2Se3 grown on GaN and graphene substrates: A reflection high-energy electron diffraction study-
dc.typeArticle-
dc.identifier.emailHo, WK: howk@hku.hk-
dc.identifier.emailXie, MH: mhxie@hku.hk-
dc.identifier.authorityXie, MH=rp00818-
dc.description.naturepublished_or_final_version-
dc.identifier.doi10.1063/1.4929697-
dc.identifier.hkuros253779-
dc.identifier.volume107-
dc.identifier.issue8-
dc.identifier.spagearticle no. 081604-
dc.identifier.epagearticle no. 081604-

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