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Article: Screening in Ultrashort (5 nm) Channel MoS2 Transistors: A Full-Band Quantum Transport Study

TitleScreening in Ultrashort (5 nm) Channel MoS2 Transistors: A Full-Band Quantum Transport Study
Authors
Issue Date2015
PublisherIEEE. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=16
Citation
IEEE Transactions on Electron Devices, 2015, v. 62 n. 8, p. 2457-2463 How to Cite?
Persistent Identifierhttp://hdl.handle.net/10722/218807
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorMishra, V-
dc.contributor.authorSmith, S-
dc.contributor.authorLiu, L-
dc.contributor.authorZahid, F-
dc.contributor.authorZhu, Y-
dc.contributor.authorGuo, H-
dc.contributor.authorSalahuddin, S-
dc.date.accessioned2015-09-18T06:54:01Z-
dc.date.available2015-09-18T06:54:01Z-
dc.date.issued2015-
dc.identifier.citationIEEE Transactions on Electron Devices, 2015, v. 62 n. 8, p. 2457-2463-
dc.identifier.urihttp://hdl.handle.net/10722/218807-
dc.languageeng-
dc.publisherIEEE. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=16-
dc.relation.ispartofIEEE Transactions on Electron Devices-
dc.titleScreening in Ultrashort (5 nm) Channel MoS2 Transistors: A Full-Band Quantum Transport Study-
dc.typeArticle-
dc.identifier.authorityZahid, F=rp01472-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1109/TED.2015.2444353-
dc.identifier.hkuros251457-
dc.identifier.volume62-
dc.identifier.issue8-
dc.identifier.spage2457-
dc.identifier.epage2463-
dc.identifier.isiWOS:000358507600014-

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