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Article: Screening in Ultrashort (5 nm) Channel MoS2 Transistors: A Full-Band Quantum Transport Study

TitleScreening in Ultrashort (5 nm) Channel MoS2 Transistors: A Full-Band Quantum Transport Study
Authors
Issue Date2015
PublisherIEEE. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=16
Citation
IEEE Transactions on Electron Devices, 2015, v. 62 n. 8, p. 2457-2463 How to Cite?
Persistent Identifierhttp://hdl.handle.net/10722/218807

 

DC FieldValueLanguage
dc.contributor.authorMishra, V-
dc.contributor.authorSmith, S-
dc.contributor.authorLiu, L-
dc.contributor.authorZahid, F-
dc.contributor.authorZhu, Y-
dc.contributor.authorGuo, H-
dc.contributor.authorSalahuddin, S-
dc.date.accessioned2015-09-18T06:54:01Z-
dc.date.available2015-09-18T06:54:01Z-
dc.date.issued2015-
dc.identifier.citationIEEE Transactions on Electron Devices, 2015, v. 62 n. 8, p. 2457-2463-
dc.identifier.urihttp://hdl.handle.net/10722/218807-
dc.languageeng-
dc.publisherIEEE. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=16-
dc.relation.ispartofIEEE Transactions on Electron Devices-
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.rights©2015 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.-
dc.titleScreening in Ultrashort (5 nm) Channel MoS2 Transistors: A Full-Band Quantum Transport Study-
dc.typeArticle-
dc.identifier.authorityZahid, F=rp01472-
dc.description.naturepublished_or_final_version-
dc.identifier.doi10.1109/TED.2015.2444353-
dc.identifier.hkuros251457-
dc.identifier.volume62-
dc.identifier.issue8-
dc.identifier.spage2457-
dc.identifier.epage2463-

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