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Conference Paper: Effect of the interface mixing layer on the thermal boundary conductance of metal-organic semiconductor thin film-numerical study by Lattice Boltzmann Method

TitleEffect of the interface mixing layer on the thermal boundary conductance of metal-organic semiconductor thin film-numerical study by Lattice Boltzmann Method
Authors
KeywordsThin films
Metals
Semiconductors (Materials)
Electrical conductance
Lattice Boltzmann methods
Issue Date2014
PublisherASME.
Citation
The 2014 ASME International Mechanical Engineering Congress and Exposition, Montreal, QC., Canada, 14-20 November 2014. In ASME Proceedings, 2014, v. 8A, p. V08AT10A005-1 - V08AT10A005-9 How to Cite?
AbstractThe interface mixing of metal-organic semiconductor layers plays a remarkable role in thermal transport in organic electronic devices. Here we apply the lattice Boltzmann method (LBM) to simulate the effect of the interface mixing on thermal boundary conductance (TBC) of Ag-pentacene and Ag-CuPc thin films. The spring constant-dependent transmission coefficient is considered in the simulation to investigate the effect of the interfacial bonding on TBC. The simulation result is compared with the experimental result of Ag-CuPc thin film obtained by other research group. By varying the thickness and composition of the intermixing layer, a significant variation of the thermal boundary conductance of the thin film is observed. The total thermal boundary conductance will increase with the spring constant per area. The increase of the thickness of the intermixing layer leads to the downward trend of the total thermal boundary conductance and it is attributed to the enhancement of the intrinsic thermal resistance of the intermixing layer. These findings suggest the interfacial bonding, thickness and composition of the metal-organic intermixing layer should be carefully controlled to achieve the desired thermal boundary conductance.
DescriptionPaper no. IMECE2014-37785
Volume 8A entitled: Heat Transfer and Thermal Engineering
Persistent Identifierhttp://hdl.handle.net/10722/217494
ISBN

 

DC FieldValueLanguage
dc.contributor.authorWang, X-
dc.contributor.authorChan, PKL-
dc.date.accessioned2015-09-18T06:00:53Z-
dc.date.available2015-09-18T06:00:53Z-
dc.date.issued2014-
dc.identifier.citationThe 2014 ASME International Mechanical Engineering Congress and Exposition, Montreal, QC., Canada, 14-20 November 2014. In ASME Proceedings, 2014, v. 8A, p. V08AT10A005-1 - V08AT10A005-9-
dc.identifier.isbn978-0-7918-4955-2-
dc.identifier.urihttp://hdl.handle.net/10722/217494-
dc.descriptionPaper no. IMECE2014-37785-
dc.descriptionVolume 8A entitled: Heat Transfer and Thermal Engineering-
dc.description.abstractThe interface mixing of metal-organic semiconductor layers plays a remarkable role in thermal transport in organic electronic devices. Here we apply the lattice Boltzmann method (LBM) to simulate the effect of the interface mixing on thermal boundary conductance (TBC) of Ag-pentacene and Ag-CuPc thin films. The spring constant-dependent transmission coefficient is considered in the simulation to investigate the effect of the interfacial bonding on TBC. The simulation result is compared with the experimental result of Ag-CuPc thin film obtained by other research group. By varying the thickness and composition of the intermixing layer, a significant variation of the thermal boundary conductance of the thin film is observed. The total thermal boundary conductance will increase with the spring constant per area. The increase of the thickness of the intermixing layer leads to the downward trend of the total thermal boundary conductance and it is attributed to the enhancement of the intrinsic thermal resistance of the intermixing layer. These findings suggest the interfacial bonding, thickness and composition of the metal-organic intermixing layer should be carefully controlled to achieve the desired thermal boundary conductance.-
dc.languageeng-
dc.publisherASME.-
dc.relation.ispartofASME Proceedings-
dc.subjectThin films-
dc.subjectMetals-
dc.subjectSemiconductors (Materials)-
dc.subjectElectrical conductance-
dc.subjectLattice Boltzmann methods-
dc.titleEffect of the interface mixing layer on the thermal boundary conductance of metal-organic semiconductor thin film-numerical study by Lattice Boltzmann Method-
dc.typeConference_Paper-
dc.identifier.emailChan, PKL: pklc@hku.hk-
dc.identifier.authorityChan, PKL=rp01532-
dc.identifier.doi10.1115/IMECE2014-37785-
dc.identifier.hkuros252346-
dc.identifier.volume8A-
dc.identifier.spageV08AT10A005-1-
dc.identifier.epageV08AT10A005-9-
dc.publisher.placeUnited States-

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